Very high hole mobilities in modulation-doped Ge quantum wells grown by low-energy plasma enhanced chemical vapor deposition

Ka¨nel, Hans von; Kummer, Matthias; Isella, Giovanni; Mu¨ller, Elisabeth; Hackbarth, Thomas
April 2002
Applied Physics Letters;4/22/2002, Vol. 80 Issue 16, p2922
Academic Journal
We report on the fabrication of modulation-doped compressively strained Ge quantum wells by low-energy plasma enhanced chemical vapor deposition. A virtual substrate consisting of a thick linearly graded SiGe buffer layer and a cap layer of constant composition is first grown at a high rate (>5 nm/s). The active layer stack, grown at a reduced rate, contains strain compensating cladding layers with modulation doping above the channel. Mobilities of up to 3000 cm[sup 2]/V s and 87 000 cm[sup 2]/V s have been achieved at room temperature and liquid He temperature, respectively. © 2002 American Institute of Physics.


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