TITLE

Thin-film transistors based on well-ordered thermally evaporated naphthacene films

AUTHOR(S)
Gundlach, D. J.; Nichols, J. A.; Zhou, L.; Jackson, T. N.
PUB. DATE
April 2002
SOURCE
Applied Physics Letters;4/22/2002, Vol. 80 Issue 16, p2925
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on organic thin-film transistors fabricated using the small-molecule organic semiconductor naphthacene as the active layer material with device performance suitable for several large-area or low-cost electronics applications. We investigated naphthacene thin films deposited by thermal evaporation onto amorphous substrates held near room temperature. Using atomic-force microscopy and x-ray diffraction we find naphthacene films consist of a high density of submicron-sized grains with a surprisingly high degree of molecular order. Thin-film transistors fabricated using evaporated naphthacene films on thermally oxidized silicon substrates have field-effect mobility larger than 0.1 cm2/V s, current on/off ratio greater than 10[sup 6], negative threshold voltage, and subthreshold slope of 1 V/decade. © 2002 American Institute of Physics.
ACCESSION #
6494771

 

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