Electrical properties of La-doped strontium titanate thin films

Olaya, David; Pan, Feng; Rogers, Charles T.; Price, John C.
April 2002
Applied Physics Letters;4/22/2002, Vol. 80 Issue 16, p2928
Academic Journal
We report on the properties of lanthanum-doped SrTiO[sub 3] thin films grown by off-axis laser ablation on LaAlO[sub 3] and SrTiO[sub 3] substrates in oxygen partial pressures ranging from 10[sup -8] Torr to 55 mTorr. The La/Sr doping ratio of the ablation target was 1%. The resulting films have carrier densities measured in the range of 4.7–17.5×10[sup 19] cm[sup -3] independent of temperature from room temperature to 4 K and low-temperature mobilities as high as 130 cm[sup 2]/V s. These films are much more tolerant to the presence of oxygen during growth than were similar Nb-doped films reported previously. © 2002 American Institute of Physics.


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