TITLE

Electrical properties of La-doped strontium titanate thin films

AUTHOR(S)
Olaya, David; Pan, Feng; Rogers, Charles T.; Price, John C.
PUB. DATE
April 2002
SOURCE
Applied Physics Letters;4/22/2002, Vol. 80 Issue 16, p2928
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the properties of lanthanum-doped SrTiO[sub 3] thin films grown by off-axis laser ablation on LaAlO[sub 3] and SrTiO[sub 3] substrates in oxygen partial pressures ranging from 10[sup -8] Torr to 55 mTorr. The La/Sr doping ratio of the ablation target was 1%. The resulting films have carrier densities measured in the range of 4.7–17.5×10[sup 19] cm[sup -3] independent of temperature from room temperature to 4 K and low-temperature mobilities as high as 130 cm[sup 2]/V s. These films are much more tolerant to the presence of oxygen during growth than were similar Nb-doped films reported previously. © 2002 American Institute of Physics.
ACCESSION #
6494770

 

Related Articles

  • Film structure and ferroelectric properties of vanadium-doped Sr[sub 0.8]Bi[sub 2.3]Ta[sub 2]O[sub 9] thin films. Chen, San-Yuan; Lan, Bang-Chiang; Taso, Chang-Sheng // Journal of Applied Physics;6/15/2002, Vol. 91 Issue 12, p10032 

    Vanadium-doped strontium bismuth tantalate Sr[sub 0.8]Bi[sub 2.3](Ta[sub 2-x]V[sub x])O[sub ]9 (SBTV) (x = 0-0.8) have been prepared on Pt/Ti/SiO[sub 2]/Si substrates using a metalorganic decomposition method. Well-crystallized and dense SBTV films can be obtained at an annealing temperature as...

  • Effect of uniaxial stress on the polarization of SrBi[sub 2]Ta[sub 2]O[sub 9] thin films. Lu¨, Xiaomei; Jinsong Zhu; Xuelian Li; Zhigang Zhang; Xuesong Zhang; Di Wu; Fen Yan; Yong Ding; Yening Wang // Applied Physics Letters;5/22/2000, Vol. 76 Issue 21 

    The effect of uniaxial stress on the ferroelectric properties of SrBi[sub 2]Ta[sub 2]O[sub 9] films with different thicknesses (330, 440, and 660 nm) has been investigated. It is found that both the remnant polarization (Pr) and the spontaneous polarization (Ps) decrease with the application of...

  • Improved low frequency and microwave dielectric response in strontium titanate thin films grown by pulsed laser ablation. Dalberth, M. J.; Stauber, R. E.; Price, J. C.; Rogers, C. T.; Galt, David // Applied Physics Letters;1/26/1998, Vol. 72 Issue 4, p507 

    We have grown epitaxial strontium titanate films on lanthanum aluminate substrates at a range of oxygen pressures and substrate temperatures. The complex dielectric function was measured as a function of temperature and electric field bias using a microwave ring resonator and a flip-chip...

  • Composition influence on the physical and electrical properties of SrxTi1-xOy-based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN bottom electrodes. Menou, N.; Popovici, M.; Clima, S.; Opsomer, K.; Polspoel, W.; Kaczer, B.; Rampelberg, G.; Tomida, K.; Pawlak, M. A.; Detavernier, C.; Pierreux, D.; Swerts, J.; Maes, J. W.; Manger, D.; Badylevich, M.; Afanasiev, V.; Conard, T.; Favia, P.; Bender, H.; Brijs, B. // Journal of Applied Physics;Nov2009, Vol. 106 Issue 9, p094101-1 

    In this work, the physical and electrical properties of SrxTi1-xOy (STO)-based metal-insulator-metal capacitors (MIMcaps) with various compositions are studied in detail. While most recent studies on STO were done on noblelike metal electrodes (Ru, Pt), this work focuses on a low temperature...

  • Conductivity enhancement of ultrathin LaNiO3 films in superlattices. Son, Junwoo; LeBeau, James M.; Allen, S. James; Stemmer, Susanne // Applied Physics Letters;11/15/2010, Vol. 97 Issue 20, p202109 

    The resistance of superlattices composed of bilayers of ultrathin (∼4 unit cells) of LaNiO3 and ∼3 unit cells of insulating SrTiO3 is explored as a function of temperature and the number of bilayers. All superlattices with more than one bilayer are metallic, whereas a single bilayer is...

  • Enhancing the electron mobility via delta-doping in SrTiO3. Kozuka, Y.; Kim, M.; Ohta, H.; Hikita, Y.; Bell, C.; Hwang, H. Y. // Applied Physics Letters;11/29/2010, Vol. 97 Issue 22, p222115 

    We fabricated high-mobility δ-doped structures in SrTiO3 thin films in order to investigate the low temperature electronic transport properties of confined carriers in this system. An enhancement of the electron mobility above the bulk value was observed as the doped layer thickness...

  • Growth mode control of the free carrier density in SrTiO3-δ films. Ohtomo, A.; Hwang, H. Y. // Journal of Applied Physics;Oct2007, Vol. 102 Issue 8, p083704 

    We have studied the growth dynamics and electronic properties of SrTiO3-δ homoepitaxial films by pulsed laser deposition. We find that the two dominant factors determining the growth mode are the kinetics of surface crystallization and of oxidation. When matched, persistent two-dimensional...

  • Enhanced near-band-edge emission from a-plane ZnO thin films on SrTiO substrates. Wu, Guangheng; Li, Xiang; Liu, Meifeng; Yan, Zhibo.; Liu, Jun-Ming // Applied Physics A: Materials Science & Processing;Oct2015, Vol. 121 Issue 1, p17 

    Epitaxial ZnO with controlled orientations is highly concerned, and we report epitaxial growth of (0001)- and (11-20)-oriented ZnO films, respectively, on (111)- and (100)-SrTiO (STO) substrates using pulsed laser deposition. The epitaxial growth of (11-20)-ZnO films on (100)-STO, with in-plane...

  • Electronic transport behavior of off-stoichiometric La and Nb doped SrxTiyO3-δ epitaxial thin films and donor doped single-crystalline SrTiO3. Baniecki, J. D.; Ishii, M.; Aso, H.; Kobayashi, K.; Kurihara, K.; Yamanaka, K.; Vailionis, A.; Schafranek, R. // Applied Physics Letters;12/5/2011, Vol. 99 Issue 23, p232111 

    Above room temperature electronic transport properties of SrxTiyO3-δ films with cation A/B = (La + Sr/Nb + Ti) ratios of 0.9 to 1.2 are compared to STO single crystals with combined Hall carrier densities of 3 × 1016 cm-3 ≤ nH ≤ 1022 cm-3. In contrast to Hall mobility which is...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics