Low-resistant and high-transparent Ru/Ni ohmic contact on p-type GaN

Jang, Ho Won; Urbanek, W.; Yoo, M. C.; Lee, Jong-Lam
April 2002
Applied Physics Letters;4/22/2002, Vol. 80 Issue 16, p2937
Academic Journal
We report a low-resistant and high-transparent Ru-based ohmic contact on p-type GaN through oxidation annealing under O[sub 2] atmosphere. A low resistivity of 4.5×10[sup -5] Ω cm[sup 2] and high light transmittance (84.6%) were simultaneously obtained from oxidized Ru (50 Å)/Ni (50 Å) contact. The RuO[sub 2] formed on p-type GaN played a role in reducing the effective Schottky barrier height for injection of holes and NiO layer produced on the RuO[sub 2] acted as a diffusion barrier for the outdiffusion of released Ga and N atoms, resulting in the reduction of the contact resistivity as well as the enhancement of light transmission. © 2002 American Institute of Physics.


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