Midinfrared intersubband absorption on AlGaN/GaN-based high-electron-mobility transistors

Hofstetter, Daniel; Diehl, Laurent; Faist, Je´ro⁁me; Schaff, William J.; Hwang, Jeff; Eastman, Lester F.; Zellweger, Christoph
April 2002
Applied Physics Letters;4/22/2002, Vol. 80 Issue 16, p2991
Academic Journal
Intersubband absorption measurements on two nominally undoped AlGaN/GaN-based high-electron-mobility transistors with different Al compositions in the barrier layer are presented. The first transistor with a barrier consisting of Al[sub 0.6]Ga[sub 0.4]N showed an absorption peak at 247 meV (1973 cm[sup -1]) with a full width at half maximum (FWHM) of 126 meV, while the second device utilizing an Al[sub 0.8]Ga[sub 0.2]N barrier had its peak at 306 meV (2447 cm[sup -1]) with a FWHM of 86 meV. Self-consistently computed potentials and intersubband transition energies showed good agreement with the experimental findings, and therefore confirmed previously published values for the internal piezoelectric field in such structures. © 2002 American Institute of Physics.


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