TITLE

Midinfrared intersubband absorption on AlGaN/GaN-based high-electron-mobility transistors

AUTHOR(S)
Hofstetter, Daniel; Diehl, Laurent; Faist, Je´ro⁁me; Schaff, William J.; Hwang, Jeff; Eastman, Lester F.; Zellweger, Christoph
PUB. DATE
April 2002
SOURCE
Applied Physics Letters;4/22/2002, Vol. 80 Issue 16, p2991
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Intersubband absorption measurements on two nominally undoped AlGaN/GaN-based high-electron-mobility transistors with different Al compositions in the barrier layer are presented. The first transistor with a barrier consisting of Al[sub 0.6]Ga[sub 0.4]N showed an absorption peak at 247 meV (1973 cm[sup -1]) with a full width at half maximum (FWHM) of 126 meV, while the second device utilizing an Al[sub 0.8]Ga[sub 0.2]N barrier had its peak at 306 meV (2447 cm[sup -1]) with a FWHM of 86 meV. Self-consistently computed potentials and intersubband transition energies showed good agreement with the experimental findings, and therefore confirmed previously published values for the internal piezoelectric field in such structures. © 2002 American Institute of Physics.
ACCESSION #
6494749

 

Related Articles

  • AlGaN/GaN heterojunction bipolar transistor structures-design considerations. Yumin Zhang; Cheng Cai // Journal of Applied Physics;7/15/2000, Vol. 88 Issue 2, p1067 

    Studies the potential of III-nitride materials for the fabrication of bipolar transistors. Examination of several heterojunction bipolar transistor structures; Use of spontaneous and piezoelectric polarization charges to create large hole sheet carrier densities in the base layer.

  • High voltage operation (>80 V) of GaN bipolar junction transistors with low leakage. Limb, J. B.; Limb, J.B.; Xing, H.; Xing, C.; Moran, B.; McCarthy, L.; DenBaars, S. P.; DenBaars, S.P.; Mishra, U. K.; Mishra, U.K. // Applied Physics Letters;4/24/2000, Vol. 76 Issue 17 

    We have demonstrated the high voltage operation of n-p-n GaN bipolar junction transistors using regrown emitters. Devices were grown by metalorganic chemical vapor deposition on sapphire substrates. The n-type emitter was grown selectively on a base-collector p-n junction diode using a...

  • High current gain (>2000) of GaN/InGaN double heterojunction bipolar transistors using base regrowth of p-InGaN. Makimoto, Toshiki; Kumakura, Kazuhide; Kobayashi, Naoki // Applied Physics Letters;8/4/2003, Vol. 83 Issue 5, p1035 

    GaN/InGaN double heterojunction bipolar transistors with a regrown p-InGaN extrinsic base have been fabricated on SiC substrates. The maximum common-emitter current gain exceeds 2000 at the collector current of 15 mA for a 50 μm × 30 μm device. In addition, the offset voltage in the...

  • NEW GRAPHENE-TYPE MATERIAL CREATED.  // Electronics World;Jul2014, Vol. 120 Issue 1939, p6 

    The article reports on the development of graphic carbon nitride, a new material based on triazine designed for the electronic device transiistor improvement.

  • Two-phonon absorption spectra in wurtzite GaN. Azuhata, Takashi; Shimada, Kazuhiro // Applied Physics Letters;10/4/1999, Vol. 75 Issue 14, p2076 

    Studies the two-phonon absorption spectrum for wurtzite (WZ) gallium nitride (GaN) alloys. Two-phonon absorption (TPA) spectra and the second-order Raman spectra; Growing of undoped WZ-GaN films on epitaxially laterally overgrown GaN substrates; Lattice-dynamical calculations using an adiabatic...

  • Organics, nanowires, CMP.  // Solid State Technology;Jun2002, Vol. 45 Issue 6, p36 

    Lists several issues that were discussed at the MRS' 2002 Spring Conference. Performance of organic thin-film transistors (OTFT); Types of OTFT; Commercial applications of nanowires; Comparison of scaling, filtering and contact wear models in terms of failure to clear oxide and excessive...

  • Resolution of amorphous silicon thin-film transistor instability mechanisms using ambipolar transistors. van Berkel, C.; Powell, M. J. // Applied Physics Letters;10/5/1987, Vol. 51 Issue 14, p1094 

    Bias stress measurements on amorphous silicon-silicon nitride ambipolar thin-film transistors give clear evidence for the co-existence of two distinct instability mechanisms: the metastable creation of states in the a-Si:H layer and charge trapping in the a-SiN:H layer. The creation of...

  • Effect of temperature on data retention of silicon-oxide-nitride-oxide-semiconductor nonvolatile memory transistors. Miller, S. L.; McWhorter, P. J.; Dellin, T. A.; Zimmerman, G. T. // Journal of Applied Physics;6/1/1990, Vol. 67 Issue 11, p7115 

    Presents a study which investigated the discharge behavior of silicon-oxide-nitride-oxide-semiconductor (SONOS) nonvolatile memory transistors for a range of programming. Effect of temperature on data retention in a SONOS; Studies on the effect of temperature on charge decay in nitride-base...

  • Effect of NH3 plasma treatment of gate nitride on the performance of amorphous silicon thin-film transistors. Luan, Shengwen; Neudeck, Gerold W. // Journal of Applied Physics;10/1/1990, Vol. 68 Issue 7, p3445 

    Investigates the effect of NH[sub3] plasma treatment of the hydrogenated amorphous silicon nitride gate insulator on the performance of hydrogenated amorphous silicon thin-film transistors for different deposition conditions of the gate nitride. Experiment; Results and discussion; Conclusion.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics