TITLE

Modeling of Q-switched semiconductor lasers based on type-II quantum wells: Increasing the pulse energy and peak power

AUTHOR(S)
Khurgin, Jacob B.; Vurgaftman, Igor; Meyer, Jerry R.
PUB. DATE
April 2002
SOURCE
Applied Physics Letters;4/15/2002, Vol. 80 Issue 15, p2631
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We propose a semiconductor laser (λapprox. 1.25 μm) whose active region is a type-II multiple-quantum-well structure (AlGaInAs/AlGaAsSb/AlInAs on InP) to lengthen the free-carrier lifetime. Simulations project an order-of-magnitude enhancement of the Q-switched energy per pulse without increasing the pump current. © 2002 American Institute of Physics.
ACCESSION #
6483072

 

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