Lowering of operational voltage of organic electroluminescent devices by coating indium-tin-oxide electrodes with a thin CuO[sub x] layer

Hu, Wenping; Manabe, Kaoru; Furukawa, Takumi; Matsumura, Michio
April 2002
Applied Physics Letters;4/15/2002, Vol. 80 Issue 15, p2640
Academic Journal
We devised a method of modifying indium-tin-oxide (ITO) electrodes for organic electroluminescent devices. It consists of deposition of a nanometer-thick Cu layer on the ITO electrode and an oxygen plasma treatment. By this modification, the surface of the ITO substrate is covered with a partly oxidized Cu layer (CuO[sub x]). The CuO[sub x]-coated ITO electrode possesses strong hole-injection ability, which leads to lowered operational voltage and high luminance from the devices consisting of tris(8-quinolinato)aluminum and diamine hole-transport layers. The hole-injection ability of the CuO[sub x]-coated ITO electrode is better than that of the ITO electrode modified by conventional methods, such as insertion of a Cu-phthalocyanine buffer layer. Moreover, the CuO[sub x] layer is effective to improve the durability of the devices. © 2002 American Institute of Physics.


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