Charge state dependence of the diffusivity of interstitial Fe in silicon detected by Mo¨ssbauer spectroscopy

Gunnlaugsson, H. P.; Weyer, G.; Dietrich, M.; Fanciulli, M.; Bharuth-Ram, K.; Sielemann, R.
April 2002
Applied Physics Letters;4/15/2002, Vol. 80 Issue 15, p2657
Academic Journal
Interstitial [sup 57m]Fe atoms excited in the 14.4 keV Mo¨ssbauer state have been created in silicon at 400–800 K as a result of the recoil imparted on these daughter atoms in the β[sup -] decay of ion-implanted, substitutional [sup 57]Mn. Diffusional jumps of the interstitial [sup 57m]Fe cause a line broadening in their Mo¨ssbauer spectra, which is directly proportional to their diffusivity. Thus, the charge-state-dependent diffusivity has been determined in differently doped material. © 2002 American Institute of Physics.


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