Extended phase diagrams for guiding plasma-enhanced chemical vapor deposition of silicon thin films for photovoltaics applications

Ferlauto, A. S.; Koval, R. J.; Wronski, C. R.; Collins, R. W.
April 2002
Applied Physics Letters;4/15/2002, Vol. 80 Issue 15, p2666
Academic Journal
Real time spectroscopic ellipsometry has been applied to develop extended phase diagrams that can guide the deposition of hydrogenated silicon (Si:H) thin films for highest performance solar cells. Previous such studies have shown that optimization of amorphous Si:H intrinsic layers by rf plasma-enhanced chemical vapor deposition (PECVD) is achieved using the maximum possible H[sub 2] dilution of SiH[sub 4] while avoiding a transition to the mixed-phase (amorphous+microcrystalline) growth regime. In this study, we propose that optimization of amorphous Si:H in higher rate rf PECVD processes further requires the largest possible thickness onset for a surface roughening transition detected in the amorphous film growth regime. © 2002 American Institute of Physics.


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