TITLE

Piezoelectric effect on Al[sub 0.35-δ]In[sub δ]Ga[sub 0.65]N/GaN heterostructures

AUTHOR(S)
Lo, Ikai; Tsai, J. K.; Tu, Li-Wei; Hsieh, K. Y.; Tsai, M. H.; Liu, C. S.; Huang, J. H.; Elhamri, S.; Mitchel, W. C.; Sheu, J. K.
PUB. DATE
April 2002
SOURCE
Applied Physics Letters;4/15/2002, Vol. 80 Issue 15, p2684
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Al[sub 0.35-δ]In[sub δ]Ga[sub 0.65]N/GaN heterostructures have been studied by using transmission electron microscopy, photoluminescence, and Shubnikov–de Haas (SdH) measurements. In the sample of δ<0.01%, two SdH oscillations beat each other due to the population of the lowest two subbands. The carrier concentrations of these two subbands are 1.398 and 1.248×10[sup 13] cm[sup -2] and the electric field at the interface is reduced to 2.19×10[sup 4] V/cm, which is one order of magnitude smaller than that of Al[sub 0.35]Ga[sub 0.65]N/GaN heterostructure. We suggest that a small fraction of In atoms in the Al[sub 0.35-δ]In[sub δ]Ga[sub 0.65]N can be used as a tuning parameter to control the strain and the piezoelectric field at the interface. © 2002 American Institute of Physics.
ACCESSION #
6483053

 

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