Nitrogen-induced transient enhanced diffusion of dopants

Murthy, Cheruvu; Lee, Kilho; Rengarajan, Rajesh; Dokumaci, Omer; Ronsheim, Paul; Tews, Helmut; Inaba, Satoshi
April 2002
Applied Physics Letters;4/15/2002, Vol. 80 Issue 15, p2696
Academic Journal
Studies of both systematic experiments and detailed simulations for examining the effects of N[sub 2][SUP ARRANGE="STAGGER"]+] implant on channel dopants are described. Step-by-step monitor wafer experiments have clearly confirmed the nitrogen-induced transient enhanced diffusion (TED) of dopants. Process simulations within the “+1” N[sub 2][SUP ARRANGE="STAGGER"]+] profile approach have demonstrated the need to scale down the +1 model parameter for matching the measured depth profiles. The underlying mechanism for the reduced +1 model parameter is that nitrogen which diffuses toward the Si surface becomes a sink for the interstitials. These combined studies also show that nitrogen-induced TED of dopants increases with N[sub 2][SUP ARRANGE="STAGGER"]+] dose. © 2002 American Institute of Physics.


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