Large remanent polarization of (Bi,Nd)[sub 4]Ti[sub 3]O[sub 12] epitaxial thin films grown by metalorganic chemical vapor deposition

Kojima, Takashi; Sakai, Tomohiro; Watanabe, Takayuki; Funakubo, Hiroshi; Saito, Keisuke; Osada, Minoru
April 2002
Applied Physics Letters;4/15/2002, Vol. 80 Issue 15, p2746
Academic Journal
(104)-oriented Bi[sub 4]Ti[sub 3]O[sub 12], La-substituted Bi[sub 4]Ti[sub 3]O[sub 12][(Bi[sub 3.44]La[sub 0.56])Ti[sub 3]O[sub 12]] and Nd-substituted Bi[sub 4]Ti[sub 3]O[sub 12][(Bi[sub 3.54]Nd[sub 0.46])Ti[sub 3]O[sub 12]] films were epitaxially grown on (111)SrRuO[sub 3]//(111)SrTiO[sub 3] substrates at 700 °C by metalorganic chemical vapor deposition. All deposited films showed strong (104) orientations. The values of the remanent polarization (P[sub r]) and coercive field (E[sub c]) of the (104)-oriented epitaxial (Bi[sub 3.54]Nd[sub 0.46])Ti[sub 3]O[sub 12] thin film were 25 μC/cm2 and 135 kV/cm, respectively. This P[sub r] value was larger than that of the (104)-oriented (Bi[sub 3.44]La[sub 0.56])Ti[sub 3]O[sub 12] film: P[sub r] and E[sub c] values of the (Bi[sub 3.44]La[sub 0.56])Ti[sub 3]O[sub 12] were 17 μC/cm2 and 145 kV/cm, respectively. These good ferroelectric properties of (Bi[sub 3.54]Nd[sub 0.46])Ti[sub 3]O[sub 12] films can be explained by a large tilting of TiO[sub 6] octahedra induced by the substitution of Nd[sup 3+], the ionic radius of which is smaller than that of La[sup 3+]. Moreover, this P[sub r] value is almost equal to that of commercially used lead zirconate titanate (PZT) films for nonvolatile ferroelectric random access memory (FeRAM) applications. These (104)-oriented epitaxial (Bi[sub 3.54]Nd[sub 0.46])Ti[sub 3]O[sub 12] thin films also showed a fatigue-free character. As a result, lead-free Nd-substituted Bi[sub 4]Ti[sub 3]O[sub 12] films with good ferroelectric properties comparable with those of PZT films are useful candidates for FeRAM applications. © 2002 American Institute of Physics.


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