TITLE

Large remanent polarization of (Bi,Nd)[sub 4]Ti[sub 3]O[sub 12] epitaxial thin films grown by metalorganic chemical vapor deposition

AUTHOR(S)
Kojima, Takashi; Sakai, Tomohiro; Watanabe, Takayuki; Funakubo, Hiroshi; Saito, Keisuke; Osada, Minoru
PUB. DATE
April 2002
SOURCE
Applied Physics Letters;4/15/2002, Vol. 80 Issue 15, p2746
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
(104)-oriented Bi[sub 4]Ti[sub 3]O[sub 12], La-substituted Bi[sub 4]Ti[sub 3]O[sub 12][(Bi[sub 3.44]La[sub 0.56])Ti[sub 3]O[sub 12]] and Nd-substituted Bi[sub 4]Ti[sub 3]O[sub 12][(Bi[sub 3.54]Nd[sub 0.46])Ti[sub 3]O[sub 12]] films were epitaxially grown on (111)SrRuO[sub 3]//(111)SrTiO[sub 3] substrates at 700 °C by metalorganic chemical vapor deposition. All deposited films showed strong (104) orientations. The values of the remanent polarization (P[sub r]) and coercive field (E[sub c]) of the (104)-oriented epitaxial (Bi[sub 3.54]Nd[sub 0.46])Ti[sub 3]O[sub 12] thin film were 25 μC/cm2 and 135 kV/cm, respectively. This P[sub r] value was larger than that of the (104)-oriented (Bi[sub 3.44]La[sub 0.56])Ti[sub 3]O[sub 12] film: P[sub r] and E[sub c] values of the (Bi[sub 3.44]La[sub 0.56])Ti[sub 3]O[sub 12] were 17 μC/cm2 and 145 kV/cm, respectively. These good ferroelectric properties of (Bi[sub 3.54]Nd[sub 0.46])Ti[sub 3]O[sub 12] films can be explained by a large tilting of TiO[sub 6] octahedra induced by the substitution of Nd[sup 3+], the ionic radius of which is smaller than that of La[sup 3+]. Moreover, this P[sub r] value is almost equal to that of commercially used lead zirconate titanate (PZT) films for nonvolatile ferroelectric random access memory (FeRAM) applications. These (104)-oriented epitaxial (Bi[sub 3.54]Nd[sub 0.46])Ti[sub 3]O[sub 12] thin films also showed a fatigue-free character. As a result, lead-free Nd-substituted Bi[sub 4]Ti[sub 3]O[sub 12] films with good ferroelectric properties comparable with those of PZT films are useful candidates for FeRAM applications. © 2002 American Institute of Physics.
ACCESSION #
6483029

 

Related Articles

  • Core-shell photonic band gap structures fabricated using laser-assisted chemical vapor deposition. Wang, H.; Lu, Y. F. // Journal of Applied Physics;Jan2008, Vol. 103 Issue 1, p013113 

    Laser-assisted chemical vapor deposition (LCVD), in combination with three-dimensional (3D) self-assembly of colloidal silica particles, was used to fabricate 3D core-shell photonic band gap (PBG) structures. Self-assembled multilayer silica particles were formed on silicon substrates using the...

  • Study of the temporal current stability of field-emitted electrons from ultrananocrystalline diamond films. Uppireddi, Kishore; Weiner, Brad R.; Morell, Gerardo // Journal of Applied Physics;May2008, Vol. 103 Issue 10, p104315 

    The temporal current stability and the current fluctuations of the field emission current obtained from ultrananocrystalline diamond (UNCD) films were investigated. The films were synthesized by Ar-rich dc plasma assisted hot filament chemical vapor deposition. The field emission properties were...

  • Microstructure of lateral epitaxial overgrown InAs on (100) GaAs substrates. Suryanarayanan, G.; Khandekar, Anish A.; Kuech, Thomas F.; Babcock, Susan E. // Applied Physics Letters;9/8/2003, Vol. 83 Issue 10, p1977 

    Substantial defect reduction was achieved in InAs/GaAs by lateral epitaxial overgrowth in which InAs was grown on mask-patterned (100) GaAs with stripe-shaped windows of various widths by metalorganic chemical vapor deposition. The InAs growth morphology, crystal quality, and microstructure were...

  • Relaxed GexSi1-x films grown by rapid thermal processing chemical vapor deposition. Jung, K. H.; Kim, Y. M.; Kwong, D. L. // Applied Physics Letters;4/30/1990, Vol. 56 Issue 18, p1775 

    High quality, epitaxial, relaxed GexSi1-x layers have been grown by rapid thermal processing chemical vapor deposition. Relaxation is believed to be due primarily to the high deposition temperature of 1000 °C and occurred through the formation of an asymmetric misfit dislocation network...

  • Preparation of Ti[sub 2]Ba[sub 2]CaCu[sub 2]O[sub 8] superconducting thin films on LaAlO[sub 3].... Ladd, J.A.; Collins, B.T.; Matey, J.R.; Zhao, J.; Norris, P. // Applied Physics Letters;9/9/1991, Vol. 59 Issue 11, p1368 

    Reports on the preparation of single phase Tl[sub 2]Ba[sub 2]CaCu[sub 2] thin films on LaAlO[sub 3] substrates via a two-step deposition process. Deposition of the precursor films by metalorganic chemical vapor deposition; Substrate temperature; Orientation of the resultant films.

  • Excimer-laser-induced sub-0.5-mum patterning of WO[sub 3] thin films. Rothschild, M.; Forte, A.R. // Applied Physics Letters;9/30/1991, Vol. 59 Issue 14, p1790 

    Examines the deposition of amorphous WO[sub 3] thin films in a plasma-enhanced chemical vapor deposition system. Mechanism for laser-induced etch selectivity; Difference in the etch rates; Achievement of submicrometer patterning with single pulse fluence.

  • Epitaxial growth of iridium and platinum films on sapphire by metalorganic chemical vapor.... Vargas, Roberto; Goto, Takashi // Applied Physics Letters;8/29/1994, Vol. 65 Issue 9, p1094 

    Examines the growth of iron and platinum epitaxial films on sapphire by metalorganic chemical vapor deposition. Achievement of the epitaxial growth at deposition temperatures; Determination of the film orientation and epitaxial relationship between films and substrates.

  • Two kinds of nitrogen atoms in nitrogen-substituted, highly crystalline graphite prepared by.... Matsui, T.; Yudasaka, M. // Applied Physics Letters;10/24/1994, Vol. 65 Issue 17, p2145 

    Describes the preparation of nitrogen-substituted graphite thin films by chemical vapor deposition using pyrrole as a starting material. Use of nickel as the substrate material; Closeness of the interlayer spacing of the films to that of single-crystal graphite; Observation of two x-ray...

  • Photoenhanced chemical-vapor deposition of BaTiO[sub 3]. Jiming Zhang; Beets Jr., Charles P. // Applied Physics Letters;11/7/1994, Vol. 65 Issue 19, p2410 

    Describes the photoenhanced chemical vapor deposition of BaTiO[sub 3] films. Formation of highly a-axis oriented BaTiO3 on MgO (100) substrates; Random orientation of BaTiO[sub 3] films deposited on platinum coated silicon substrates; X-ray diffraction peaks of BaTiO[sub 3] deposited at...

  • Use of oxygen-stabilized C[sub 60] films for selective chemical vapor deposition. McGinnis, Sean; Norin, Lars // Applied Physics Letters;2/3/1997, Vol. 70 Issue 5, p586 

    Observes the use of oxygen-stabilized carbon[sub 60] thin films as selective mask for tungsten chemical vapor deposition on silicon substrate. Stabilization of the mask by ultraviolet/visible light in oxygen; Dependence of the film thermal stability and inertness on oxygen uptake; Use of x-ray...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics