Measurement of barrier heights in high permittivity gate dielectric films

Zafar, S.; Cartier, E.; Gusev, E. P.
April 2002
Applied Physics Letters;4/15/2002, Vol. 80 Issue 15, p2749
Academic Journal
Based on theoretical studies of tunneling current phenomenon, a method for measuring barrier heights in metal–oxide–semiconductor structures is illustrated. Using this method, barrier heights associated with the Al[sub 2]O[sub 3] gate dielectric films are investigated. Also, the main conduction mechanism in Al[sub 2]O[sub 3] gate dielectric films is identified to be tunneling. © 2002 American Institute of Physics.


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