TITLE

The role of p-type doping and the density of states on the modulation response of quantum dot lasers

AUTHOR(S)
Shchekin, O. B.; Deppe, D. G.
PUB. DATE
April 2002
SOURCE
Applied Physics Letters;4/15/2002, Vol. 80 Issue 15, p2758
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The modulation response of quantum dot (QD) lasers is analyzed using a quasi-equilibrium approach. The model suggests that present QD lasers are limited due to hole levels that are closely spaced in energy, as well as inhomogeneous broadening. Significant improvements are predicted through p-type modulation doping. The results are consistent with present QD lasers being limited in their modulation response by their differential gain as opposed to carrier capture. © 2002 American Institute of Physics.
ACCESSION #
6483025

 

Related Articles

  • Many-body effects on modulation-doped InAs/GaAs quantum dots. Joo In Lee; Hyung Gyoo Lee // Applied Physics Letters;5/26/1997, Vol. 70 Issue 21, p2885 

    Examines the factors affecting the carrier lifetime in modulation-doped quantum dots. Exhibition of band filling and band-gap renormalization in quantum dot photoluminescence spectra; Role of band filling and screening in the nonlinear optical properties of semiconductors; Energy differences...

  • Estimation of electronic confinement in a quantum dot from envelope modulation of Coulomb.... Sakamato, T.; Hwang, S.W. // Applied Physics Letters;8/15/1994, Vol. 65 Issue 7, p875 

    Examines the envelope modulation of Coulomb blockade oscillations in the conductance of a semiconductor quantum dot. Factors affecting quantum dot conductance; Relationship between the number of peaks per period and the gate voltage; Magnitude of electronic confinement strength.

  • Tunnel injection In[sub 0.4]Ga[sub 0.6]As/GaAs quantum dot lasers with 15 GHz modulation bandwidth at room temperature. Bhattacharya, P.; Ghosh, S. // Applied Physics Letters;5/13/2002, Vol. 80 Issue 19, p3482 

    By utilizing tunnel injection of electrons, first demonstrated in quantum well lasers, we have measured enhanced small-signal modulation bandwidth, f[sub -3dB], and reduced temperature sensitivity of the threshold current, characterized by T[sub 0], in In[sub 0.4]Ga[sub 0.6]As/GaAs...

  • Small-signal modulation response of InP/GaInP quantum-dot lasers. Riedl, T.; Hangleiter, A.; Porsche, J.; Scholz, F. // Applied Physics Letters;5/27/2002, Vol. 80 Issue 21, p4015 

    We report on investigations concerning the modulation dynamics of InP/GaInP quantum-dot (QD) lasers grown by metalorganic vapor-phase epitaxy. Room-temperature operation of our lasers occurs at threshold current densities (j[sub thr]) around 1.8 kA/cm² and emission wavelengths (λ) between...

  • Tunable supercurrent in a parallel double quantum dot system. Pan, H.; Lin, T. H. // European Physical Journal B -- Condensed Matter;Jun2007, Vol. 57 Issue 3, p299 

    The supercurrent through an Aharonov-Bohm interferometer containing two parallel quantum dots connected with two superconductor leads is investigated theoretically. The possibility of controlling the supercurrent is explored by tuning the quantum dot energy levels and the total magnetic flux. By...

  • Temperature-dependent measurement of Auger recombination in In0.40Ga0.60N/GaN red-emitting (λ=630 nm) quantum dots. Frost, Thomas; Banerjee, Animesh; Jahangir, Shafat; Bhattacharya, Pallab // Applied Physics Letters;2/24/2014, Vol. 104 Issue 8, preceding p1 

    We have derived the Auger recombination coefficients, as a function of temperature, for In0.4Ga0.6N/GaN self-organized quantum dots from large-signal modulation measurements made on lasers in which the quantum dots form the gain media. The value of Ca=1.3±0.2 x 10-31 cm6 s-1 at room...

  • Enhanced room-temperature quantum-dot effects in modulation-doped InAs/GaAs quantum dots. Jang, Y. D.; Park, J.; Lee, D.; Mowbray, D. J.; Skolnick, M. S.; Liu, H. Y.; Hopkinson, M.; Hogg, R. A. // Applied Physics Letters;10/26/2009, Vol. 95 Issue 17, p171902 

    Modulation-doped InAs/GaAs quantum dots (QDs) show bright photoluminescence (PL) at 300 K, linear increase of PL intensity on excitation at 300 K and rather temperature insensitive PL intensity and carrier lifetime, in contrast to undoped QDs. Systematic analyses indicate that those advantageous...

  • 40 GHz small-signal cross-gain modulation in 1.3 μm quantum dot semiconductor optical amplifiers. Meuer, C.; J. Kim; Laemmlin, M.; Liebich, S.; Bimberg, D.; Capua, A.; Eisenstein, G.; Bonk, R.; Vallaitis, T.; Leuthold, J.; Kovsh, A. R.; Krestnikov, I. L. // Applied Physics Letters;8/4/2008, Vol. 93 Issue 5, p051110 

    Small-signal cross-gain modulation of quantum dot based semiconductor optical amplifiers (QD SOAs), having a dot-in-a-well structure, is presented, demonstrating superiority for ultrahigh bit rate wavelength conversion. Optimization of the QD SOA high speed characteristics via bias current and...

  • Modulation: Plasmons lend a helping hand. Lereu, Aude L. // Nature Photonics;Jul2007, Vol. 1 Issue 7, p368 

    The article reports on the various approaches designed to boost optical modulation using surface plasmons to excite quantum dots. Researchers exploit the properties of a structured metal surface to demonstrate a compact, low-power and fast all-optical modulator. The process combines the...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics