Nanoelectronic devices with reactively fabricated semiconductor

Kim, Jooho; Akinaga, Hiro; Atoda, Nobufumi; Tominaga, Junji
April 2002
Applied Physics Letters;4/15/2002, Vol. 80 Issue 15, p2764
Academic Journal
The economic fabrication of complete circuits at the nanometer level remains challenging because of the difficulty of connecting nanodevices to one another. Here, we report the electronic nanodevices fabrication method based on the Hall effect including the connection through a thermally activated reaction. By combining incident current and external perpendicular magnetic field in the reactively fabricated memory cell, electronic signal is put in storage. It is suggested that 2.5×10[sup 9]–2.5×10[sup 11] (2.5 G–250 G) bits/in.2 capacity flash memory or dynamic random access memory can be fabricated by means of the nanosecond pulse laser or electron-beam-induced reaction. © 2002 American Institute of Physics.


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