Intraband-transition-induced dipoles in self-assembled InAs/GaAs(001) quantum dots

Chen, Zhonghui; Kim, Eui-Tae; Madhukar, Anupam
April 2002
Applied Physics Letters;4/15/2002, Vol. 80 Issue 15, p2770
Academic Journal
We present experimental evidence for the existence and directionality of dipoles induced by intraband transitions from the electron ground states to high, bound excited states in self-assembled InAs/GaAs quantum dots (QDs). Moreover, the orientation of the interband transition induced dipoles is also determined for the same QDs. The findings indicate the potential use of intraband dipoles in asymmetric QDs in proposed quantum gates. © 2002 American Institute of Physics.


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