TITLE

Intraband-transition-induced dipoles in self-assembled InAs/GaAs(001) quantum dots

AUTHOR(S)
Chen, Zhonghui; Kim, Eui-Tae; Madhukar, Anupam
PUB. DATE
April 2002
SOURCE
Applied Physics Letters;4/15/2002, Vol. 80 Issue 15, p2770
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We present experimental evidence for the existence and directionality of dipoles induced by intraband transitions from the electron ground states to high, bound excited states in self-assembled InAs/GaAs quantum dots (QDs). Moreover, the orientation of the interband transition induced dipoles is also determined for the same QDs. The findings indicate the potential use of intraband dipoles in asymmetric QDs in proposed quantum gates. © 2002 American Institute of Physics.
ACCESSION #
6483021

 

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