TITLE

Universal behavior in irradiated high-electron-mobility transistors

AUTHOR(S)
Weaver, B. D.; Jackson, E. M.
PUB. DATE
April 2002
SOURCE
Applied Physics Letters;4/15/2002, Vol. 80 Issue 15, p2791
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Radiation-induced decreases in the drain current I[sub d] in a wide range of GaAs/AlGaAs high-electron-mobility transistors (HEMTs) are shown to be directly proportional to the induced defect concentration. The constant of proportionality depends only weakly on gate length, doping profile and concentration, layer thickness, device geometry, and operating voltages, and is hence nearly device independent. The same proportionality holds when the channel layer material is changed from GaAs to InGaAs. However, when the donor layer material is switched to InGaP (in InGaAs/InGaP HEMTs), the constant of proportionality changes, and the drain current becomes 16–17 times more radiation tolerant. The drain current in InGaAs/InAlAs HEMTs is about 30 times more radiation tolerant than in InGaAs/AlGaAs. We propose that the linear dependence of I[sub d] on defect concentration arises from high-efficiency scattering of carriers out of the two-dimensional electron gas in the channel layer, and that the slope of the linear relationship is determined by the efficiency with which the donor layer reinjects scattered carriers. © 2002 American Institute of Physics.
ACCESSION #
6483014

 

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