Fabrication and low-temperature transport properties of selectively grown dual-gated single-electron transistors

Motohisa, J.; Nakajima, F.; Fukui, T.; van der Wiel, W. G.; Elzerman, J. M.; De Franceschi, S.; Kouwenhoven, L. P.
April 2002
Applied Physics Letters;4/15/2002, Vol. 80 Issue 15, p2797
Academic Journal
We report on the fabrication of a dual-gated single-electron transistor (SET) based on a quantum dot (QD) formed by selective area growth of metalorganic vapor-phase epitaxy, and its low-temperature transport properties. We observe clear Coulomb oscillations in a SET fabricated in combination with direct growth of nanostructures and lithographically defined metal gates. The magnetic field dependence of the Coulomb oscillations as well as the Coulomb diamonds suggest strong carrier confinement in our QD. © 2002 American Institute of Physics.


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