Nanoparticle single-electron transistor with metal-bridged top-gate and nanogap electrodes

Azuma, Yasuo; Suzuki, Seiichi; Maeda, Kosuke; Okabayashi, Norio; Tanaka, Daisuke; Sakamoto, Masanori; Teranishi, Toshiharu; Buitelaar, Mark R.; Smith, Charles G.; Majima, Yutaka
August 2011
Applied Physics Letters;8/15/2011, Vol. 99 Issue 7, p073109
Academic Journal
Au nanoparticle single-electron transistors with metal-bridged top-gates and nanogap electrodes were fabricated using two consecutive electron beam lithography and electroless Au plating steps. The metal-bridged top-gate electrodes were suspended above electroless Au plated nanogap electrodes. Au nanoparticles (5.2 nm in diameter) were chemisorbed between the nanogap electrodes after top-gate fabrication. Clear Coulomb diamonds were observed at 9 K. The gate capacitance Cg of the top-gate electrodes was 99 zF, which is 10 times larger than that of a similar device with only side-gate electrodes.


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