TITLE

Temperature Behaviors of In(Ga)As/GaAs Quantum Dots and Patents on the T-Sensitivity of the Lasers

AUTHOR(S)
Ju Wu
PUB. DATE
November 2009
SOURCE
Recent Patents on Materials Science;Nov2009, Vol. 2 Issue 3, p244
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In contradiction to the theoretical prediction, the characteristics of the quantum dots are thermally unstable in the relatively high temperature regime. This article briefly summaries the temperature behavior of the self- assembled quantum dots in the In(Ga)As/GaAs system, as experimentally observed in both the time-integrated and time- resolved photoluminescence measurements on thermal anomalies, thermal quenching, relaxation- and radiative-lifetime of the quantum dots. In addition, the efforts made in the relevant patterns to reduce the T sensitivity of the semiconductor lasers based on the quantum dots are described. The article gives a brief review on the recent relevant patents.
ACCESSION #
64436332

 

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