Low threshold 1.2 μm InGaAs quantum well lasers grown under low As/III ratio

Takeuchi, T.; Chang, Y.-L.; Tandon, A.; Bour, D.; Corzine, S.; Twist, R.; Tan, M.; Luan, H.-C.
April 2002
Applied Physics Letters;4/8/2002, Vol. 80 Issue 14, p2445
Academic Journal
We have achieved 160 A/cm[sup 2] threshold current density of a 1.21 μm InGaAs/GaAs quantum well (QW) laser grown under a very low As/III ratio. We investigated the As/III ratio dependence on the optical quality of InGaAs QWs grown with arsine and tertiarybutylarsine (TBA). We found that TBA allows us to grow high quality InGaAs QWs under a very low As/III ratio (∼3), while a higher As/III ratio (∼10) with arsine is necessary to obtain the similar quality QWs. This high quality InGaAs QW grown under the low As/III ratio leads to the realization of high quality InGaAsN QW which should be grown under a low As/III ratio and a high N/V ratio. © 2002 American Institute of Physics.


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