TITLE

Quaternary GaInAsN with high In content: Dependence of band gap energy on N content

AUTHOR(S)
Serries, D.; Geppert, T.; Ganser, P.; Maier, M.; Ko¨hler, K.; Herres, N.; Wagner, J.
PUB. DATE
April 2002
SOURCE
Applied Physics Letters;4/8/2002, Vol. 80 Issue 14, p2448
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Quaternary pseudomorphically strained GaInAsN films and double-quantum wells were grown by plasma assisted molecular-beam epitaxy on an InP substrate. The In content ranged from 53% to 70% while the N content was varied between 0% and 2.4%. A reduction of compressive strain and a low-energy shift of photoluminescence (PL) peak position was observed with increasing N concentration, accompanied by a reduction in PL peak intensity and increase in linewidth. The net effect of N incorporation on the GaInAsN band gap energy was calculated from the measured PL peak energies. The thus obtained composition dependent GaInAsN band gap energy was fitted using the band anticrossing model, yielding values for the interaction parameter C[sub MN] for high In-containing GaInAsN being only slightly smaller than that reported for low In-content GaInAsN on GaAs. © 2002 American Institute of Physics.
ACCESSION #
6427100

 

Related Articles

  • Growth of InGaAs/InAlAs quantum wells on InP patterned substrates by molecular beam epitaxy. Turco, F. S.; Tamargo, M. C.; Hwang, D. M.; Nahory, R. E.; Werner, J.; Kash, K.; Kapon, E. // Applied Physics Letters;1/1/1990, Vol. 56 Issue 1, p72 

    We have grown InGaAs/InAlAs quantum wells and InGaAs, InAlAs single layers over InP nonplanar substrates. Photoluminescence, transmission electron microscopy, and energy-dispersive x-ray analysis give evidence for large lateral thickness and compositional variations, which lead to in situ...

  • Ga0.47In0.53As/InP multiquantum well heterostructure lasers grown by molecular beam epitaxy operating at 1.53 μm. Tsang, W. T. // Applied Physics Letters;1984, Vol. 44 Issue 3, p288 

    Current injection Ga0.47In0.53As/InP multiquantum well heterostructure lasers operating at 1.53 μm have been successfully prepared by molecular beam epitaxy. These lasers consist of four ∼70 Å Ga0.47In0.53As wells and three ∼150 Å InP barriers. The threshold current density...

  • Photocurrent response of GaInAs/InP multiple quantum well detectors grown by gas source molecular beam epitaxy. Temkin, H.; Panish, M. B.; Logan, R. A. // Applied Physics Letters;11/1/1985, Vol. 47 Issue 9, p978 

    We have studied properties of mesa and waveguide p-i-n detectors fabricated from multiple quantum well structures grown by gas source molecular beam epitaxy. With 50 InGaAs wells, each approximately 120 Å thick, mesa detectors show quantum efficiency of up to 77% at 1.56 μm and a...

  • Optical properties of very thin GaInAs(P)/InP quantum wells grown by gas source molecular beam epitaxy. Panish, M. B.; Temkin, H.; Hamm, R. A.; Chu, S. N. G. // Applied Physics Letters;7/21/1986, Vol. 49 Issue 3, p164 

    Single quantum wells of GaInAs and GaInAsP isolated by 150-Ã…-thick InP barriers have been grown by gas source molecular beam epitaxy. The quantum wells ranged in thickness from 5 to 30 Ã…. Photoluminescence and transmission electron microscopy were used to characterize them. Intense...

  • Growth of strained InAs/InP quantum wells by molecular beam epitaxy. Hopkinson, M.; David, J.P.R. // Applied Physics Letters;2/17/1992, Vol. 60 Issue 7, p841 

    Demonstrates the growth of indium arsenide/indium phosphide quantum wells by solid source molecular beam epitaxy. Manifestation of photoluminescence spectra on emission lines; Occurrence of a strong photoluminescence emission; Demonstration on the high quality pseudomorphic structures by...

  • ZnCdSe/ZnCDMgSe quantum wells on InP substrates for visible emitters. Cavus, A.; Zeng, L. // Applied Physics Letters;6/10/1996, Vol. 68 Issue 24, p3446 

    Examines the properties of zinc cadmium selenide (ZnCdSe)/ZnCd magnesium Se quantum well structures grown by molecular beam epitaxy on indium phosphide substrates. Emission energies of the structures; Reduction of heterostructure energy range by using exactly lattice-matched quantum wells;...

  • A low drive voltage electroabsorption modulator using an InGaAs/InP superlattice. Chen, C. W.; Kim, J. W.; Silvestre, P.; Hafich, M. J.; Woods, L. M.; Robinson, G. Y.; Lile, D. L. // Journal of Applied Physics;11/1/1993, Vol. 74 Issue 9, p5895 

    Presents spectral transmission, reflection, and photocurrent absorption data obtained on gas-source molecular beam epitaxy grown in indium gallium arsenide/indium phosphide multiple quantum well and superlattice (SL) p-i-n diode structures. Description of a semiconductor superlattice; Details...

  • Selective area growth of InP/InGaAs multiple quantum well laser structures by metalorganic molecular beam epitaxy. Andrews, D. A.; Rejman-Greene, M. A. Z.; Wakefield, B.; Davies, G. J. // Applied Physics Letters;7/11/1988, Vol. 53 Issue 2, p97 

    Selective area growth of InP/InGaAs multiple quantum well laser structures has been demonstrated in openings defined in Si3 N4 layers on InP substrates. Growth was achieved, by metalorganic molecular beam epitaxy, in openings as small as 3 μm wide, but no growth occurred on the dielectric...

  • Identification of the major residual donor in unintentionally doped InP grown by molecular beam epitaxy. Martin, T.; Stanley, C. R.; Iliadis, A.; Whitehouse, C. R.; Sykes, D. E. // Applied Physics Letters;5/15/1985, Vol. 46 Issue 10, p994 

    The properties of InP grown unintentionally doped by molecular beam epitaxy are generally limited by residual free-carrier concentrations (ND-NA)∼1016 cm-3. By combining two depth profiling techniques, secondary ion mass spectrometry and electrochemical capacitance-voltage measurements, the...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics