Effect of film thickness on hydrogenated amorphous silicon grown with hydrogen diluted silane

Danesh, P.; Pantchev, B.; Grambole, D.; Schmidt, B.
April 2002
Applied Physics Letters;4/8/2002, Vol. 80 Issue 14, p2463
Academic Journal
Thin films of hydrogenated amorphous silicon (a-Si:H) prepared by plasma-enhanced chemical vapor deposition with 10% SiH[sub 4] in hydrogen have been studied concerning the effect of film thickness on the hydrogen concentration, interconnected void network and mechanical stress. The hydrogen concentration was determined by nuclear reaction analysis. The interconnected void network was studied by the method of ion exchange in glass substrate. The films were prepared at a substrate temperature in the range of 150–270 °C. The results show that at the substrate temperature of 150 °C the film starts to grow with an extensive void network, and its structural improvement with thickness is manifested by an increase of the film density. In contrast, at 270 °C the film starts to grow with a dense structure, and its improvement is manifested by an increase of the intrinsic compressive stress. The hydrogen concentration does not depend on the film thickness at any substrate temperature. © 2002 American Institute of Physics.


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