TITLE

Mg-rich precipitates in the p-type doping of InGaN-based laser diodes

AUTHOR(S)
Hansen, M.; Chen, L. F.; Lim, S. H.; DenBaars, S. P.; Speck, J. S.
PUB. DATE
April 2002
SOURCE
Applied Physics Letters;4/8/2002, Vol. 80 Issue 14, p2469
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Uniformly distributed precipitates have been observed by transmission electron microscopy in the p-type layers of laser structures. The precipitate density decreases with decreasing flow of biscyclopentadienyl-magnesium (Cp[sub 2]Mg), and the hole concentration in the laser structure was higher for a lower precipitate density. The higher hole concentration reduces the threshold current density and improves the internal quantum efficiency of the laser because of the higher number of holes available for radiative recombination. The lasers with higher precipitate density also exhibit a higher resistance. The threshold voltage was reduced 30% from 20.8 V for lasers with a high precipitate density to 14.3 V for lasers with a lower precipitate density due to the lower resistance. © 2002 American Institute of Physics.
ACCESSION #
6427093

 

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