TITLE

Effect of H[sub 2] on nitrogen incorporation in the metalorganic chemical vapor deposition of GaAs[sub 1-y]N[sub y] (0≤y≤0.08)

AUTHOR(S)
Moody, B. F.; Barletta, P. T.; El-Masry, N. A.; Roberts, J. C.; Aumer, M. E.; LeBoeuf, S. F.; Bedair, S. M.
PUB. DATE
April 2002
SOURCE
Applied Physics Letters;4/8/2002, Vol. 80 Issue 14, p2475
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The effect of hydrogen on the incorporation of nitrogen in GaAs[sub 1-y]N[sub y] grown by metalorganic chemical vapor deposition (MOCVD) is reported. Nitrogen content as high as y=0.081 has been achieved when the use of H[sub 2] is completely avoided in the MOCVD growth of GaAs[sub 1-y]N[sub y]. When H[sub 2] is added to the growth ambient, the value of y in GaAs[sub 1-y]N[sub y] decreases as the relative percent of H[sub 2] in the carrier gas increases. We will report on the properties of these GaAsN films and discuss the nature of the effect that H[sub 2] has on modulating the N content in these films. © 2002 American Institute of Physics.
ACCESSION #
6427091

 

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