Effect of H[sub 2] on nitrogen incorporation in the metalorganic chemical vapor deposition of GaAs[sub 1-y]N[sub y] (0≤y≤0.08)

Moody, B. F.; Barletta, P. T.; El-Masry, N. A.; Roberts, J. C.; Aumer, M. E.; LeBoeuf, S. F.; Bedair, S. M.
April 2002
Applied Physics Letters;4/8/2002, Vol. 80 Issue 14, p2475
Academic Journal
The effect of hydrogen on the incorporation of nitrogen in GaAs[sub 1-y]N[sub y] grown by metalorganic chemical vapor deposition (MOCVD) is reported. Nitrogen content as high as y=0.081 has been achieved when the use of H[sub 2] is completely avoided in the MOCVD growth of GaAs[sub 1-y]N[sub y]. When H[sub 2] is added to the growth ambient, the value of y in GaAs[sub 1-y]N[sub y] decreases as the relative percent of H[sub 2] in the carrier gas increases. We will report on the properties of these GaAsN films and discuss the nature of the effect that H[sub 2] has on modulating the N content in these films. © 2002 American Institute of Physics.


Related Articles

  • Spontaneous and stimulated emission from photopumped GaN grown on SiC. Zubrilov, A.S.; Nikolaev, V.I. // Applied Physics Letters;7/24/1995, Vol. 67 Issue 4, p533 

    Examines the photoluminescence of gallium nitride (GaN) layers grown on sapphire substrates by metalorganic chemical vapor deposition. Calculation of the temperature dependence of GaN band gap; Shift of photoluminescence output to lower photon energy; Observation of edge cavity stimulated...

  • Photoluminescence studies of erbium-doped GaAs under hydrostatic pressure. Culp, T.D.; Hommerich, U. // Journal of Applied Physics;7/1/1997, Vol. 82 Issue 1, p368 

    Studies the photoluminescence properties of metal-organic chemical vapor deposition GaAs:Er as a function of temperature and applied hydrostatic pressure. Spectral characteristics; Effects on the low temperature density; Thermal quenching properties.

  • Synthesis of 3C–SiC nanowhiskers and emission of visible photoluminescence. Zhang, Yafei; Nishitani-Gamo, Mikka; Xiao, Changyong; Ando, Toshihiro // Journal of Applied Physics;May2002, Vol. 91 Issue 9, p6066 

    Single-crystal 3C–SiC nanowhiskers with [111] axial orientation have been synthesized directly on an Si substrate with a large area and high surface density. The nanowhiskers were grown into the Si substrate like a foundation pile by using an Fe film as a catalyst in a microwave plasma...

  • Photoluminescence and transport studies of boron in 4h SiC. Sridhara, S.G.; Clemen, L.L.; Devaty, R.P.; Choyke, W.J.; Larkin, D.J.; Kong, H.S.; Troffer, T.; Pensl, G. // Journal of Applied Physics;6/15/1998, Vol. 83 Issue 12, p7909 

    Provides information on an experiment which investigated the low temperature photoluminescence (LTPL) of the recombination of a neutral receptor (bound exciton) complex for silicon site boron observed in homoepitaxial films of 4H SiC grown by chemical vapor deposition (CVD). Methodology used to...

  • Photoluminescence characterization of InGaP/GaAs heterostructures grown by metalorganic chemical vapor deposition. Nittono, Takumi; Sugitani, Suehiro; Hyuga, Fumiaki // Journal of Applied Physics;11/1/1995, Vol. 78 Issue 9, p5387 

    Presents a study which characterized the photoluminescence of InGaP/GaAs heterostructures grown by metalorganic chemical vapor deposition. Experimental details; Results and discussion; Conclusion.

  • Reabsorption, band-gap narrowing, and the reconciliation of photoluminescence spectra with... Sieg, R.M.; Ringel, S.A. // Journal of Applied Physics;7/1/1996, Vol. 80 Issue 1, p448 

    Analyzes the effects of reabsorption and band-gap narrowing (BGN) on experimental photoluminescence (PL) spectra of n-InP grown by metalorganic chemical vapor deposition. Measured PL spectra of InP; Reabsorption effects on the photoluminescence spectra; Band-gap narrowing near Brillouin zone...

  • Photoluminescence spectroscopy of Mg-doped GaN. Sheu, J.K.; Su, Y.K. // Journal of Applied Physics;10/15/1998, Vol. 84 Issue 8, p4590 

    Presents a study in which Mg-doped GaN films were grown by metalorganic chemical vapor deposition with various Cp2Mg flow rates. Methodology used to conduct the study; Exploration of the origin of the observed emission band; Characterization of Mg-doped p-type GaN films; Findings of the study.

  • Efficiency of photoluminescence and excess carrier confinement in InGaAsP/GaAs structures prepared by metal-organic chemical-vapor deposition. Diaz, J.; Yi, H. J.; Erdtmann, M.; He, X.; Kolev, E.; Garbuzov, D.; Bigan, E.; Razeghi, M. // Journal of Applied Physics;7/15/1994, Vol. 76 Issue 2, p700 

    Reports on special double- and separate-confinement InGaAsP/GaAs heterostructures intended for photoluminescence measurements which were grown by low-pressure metal-organic chemical-vapor deposition. Sample and experimental details; Results and discussion.

  • Observation of multiple Er[sup 3+] sites in Er-implanted GaN by site-selective.... Kim, S.; Rhee, S.J. // Applied Physics Letters;7/14/1997, Vol. 71 Issue 2, p231 

    Reports the detection of absorption bands by photoluminescence excitation (PLE) spectroscopy of Er[sup 3+] in Er-implanted metalorganic chemical vapor deposition-grown. Specification of the excitation; Manifestation of PLE spectrum characteristics; Discussion on Er-related trap.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics