TITLE

Polarization charges at spontaneously ordered (In, Ga)P/GaAs interfaces

AUTHOR(S)
Krispin, P.; Knauer, A.; Gramlich, S.
PUB. DATE
April 2002
SOURCE
Applied Physics Letters;4/8/2002, Vol. 80 Issue 14, p2493
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The depth-resolved electrical characteristics of n- and p-type GaAs/(In, Ga)P/GaAs heterojunctions are examined by capacitance–voltage measurements. Different epitaxial growth conditions are chosen to produce heterointerfaces with (In, Ga)P layers of various degrees of order. Irrespective of the conduction type of the heterojunction studied, we find positive [negative] sheet charges at the (In, Ga)P-on-GaAs [GaAs-on-(In, Ga)P] interfaces. The density of both interfacial charges increases with increasing degree of (In, Ga)P order. The experimental results can be completely explained by taking into account the spontaneous polarization of ordered (In, Ga)P. The polarization difference between ordered (In, Ga)P and GaAs (no polarization) results in opposite sheet charges at the two complementary interfaces with GaAs, in accordance with theoretical predictions. © 2002 American Institute of Physics.
ACCESSION #
6427085

 

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