TITLE

Memory effects related to deep levels in metal–oxide–semiconductor structure with nanocrystalline Si

AUTHOR(S)
Kwon, Young Hae; Park, C. J.; Lee, W. C.; Fu, D. J.; Shon, Y.; Kang, T. W.; Hong, C. Y.; Cho, H. Y.; Wang, Kang L.
PUB. DATE
April 2002
SOURCE
Applied Physics Letters;4/8/2002, Vol. 80 Issue 14, p2502
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Nanocrystalline(nc)-Si was grown on SiO[sub 2] by rapid thermal chemical vapor deposition. The tunneling oxide layer of a thickness of 4 nm was formed on p-type Si(100) by rapid thermal oxidation at 1050 °C for 30 s. Metal–oxide–semiconductor (MOS) structures were fabricated and capacitance–voltage characterization was carried out to study the memory effects of the nc-Si embedded in the MOS structure. We found the memory effect to be dominantly related to hydrogen-related traps, in addition to being influenced by the three-dimensional quantum confinement and Coulomb charge effects. Deep level transient spectroscopy reveal that the activation energies of the hydrogen-related traps are E[sub v]+0.29 eV (H1) and E[sub v]+0.42 eV (H2), and the capture cross sections are 4.70×10[sup -16] cm[sup 2] and 1.44×10[sup -15] cm[sup 2], respectively. The presence of Si&sngbnd;H and Si&sngbnd;H[sub 2] bonds was confirmed by Fourier transform infrared spectroscopy. © 2002 American Institute of Physics.
ACCESSION #
6427082

 

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