Transport-to-quantum lifetime ratios in AlGaN/GaN heterostructures

Hsu, L.; Walukiewicz, W.
April 2002
Applied Physics Letters;4/8/2002, Vol. 80 Issue 14, p2508
Academic Journal
We have calculated ratios of the transport-to-quantum lifetimes τ[sub t]/τ[sub q] of the two-dimensional electron gas in AlGaN/GaN heterostructures at low temperatures. In contrast to conventional interpretations, we show that large values of this ratio do not necessarily indicate that long-range scattering mechanisms such as Coulomb scattering are the dominant carrier scattering mechanisms and that large ratios (>20) can be obtained even when short-range scattering mechanisms are dominant. © 2002 American Institute of Physics.


Related Articles

  • Negative differential resistance in AlGaSb/InAs single-barrier heterostructures at room temperature. Beresford, R.; Luo, L. F.; Wang, W. I. // Applied Physics Letters;5/8/1989, Vol. 54 Issue 19, p1899 

    We have observed for the first time negative differential resistance at room temperature in a single-barrier tunneling heterostructure. A typical InAs/AlGaSb/InAs structure exhibits a current peak of 2.1×103 A cm-2 at 0.28 V and a peak to valley ratio of 1.6:1. We attribute the observation...

  • Noninteracting beams of ballistic two-dimensional electrons. Spector, J.; Stormer, H.L.; Baldwin, K.W.; Pfeiffer, L.N.; West, K.W. // Applied Physics Letters;1/21/1991, Vol. 58 Issue 3, p263 

    Demonstrates that two beams of two-dimensional ballistic electrons in gallium arsenide (GaAs)-aluminum GaAs (AlGaAs) heterostructure can penetrate each other with negligible mutual interaction analogous to the penetration of two optical beams. Geometry employed to demonstrate noninteracting...

  • Photoresponse of asymmetrically doped GaAs-AlAs heterostructures under external bias. Woodward, T. K.; McGill, T. C.; Burnham, R. D. // Journal of Applied Physics;11/15/1986, Vol. 60 Issue 10, p3755 

    Examines the photocurrent behavior of assymetrically doped gallium arsenide (GaAs)-aluminum arsenide (AlAs)-GaAs heterostructures characterized by thick AlAs barriers. Photocurrent per incident photo data as a function of incident light energy; Association between the shape of the photocurrent...

  • Structural properties and transport characteristics of pseudomorphic GaxIn1-xAs/AlyIn1-yAs modulation-doped heterostructures grown by molecular-beam epitaxy. Tournié, E.; Tapfer, L.; Bever, T.; Ploog, K. // Journal of Applied Physics;2/15/1992, Vol. 71 Issue 4, p1790 

    Studies the structural properties and transport characteristics of pseudomorphic gallium and aluminum compounds modulation-doped heterostructures grown by molecular-beam epitaxy. Applications of the heterostructures lattice; Sample preparation and experimental procedure; Structural...

  • X-valley tunneling in single AlAs barriers. Boykin, Timothy B.; Harris, James S. // Journal of Applied Physics;8/1/1992, Vol. 72 Issue 3, p988 

    Presents a study that examined tunneling through gallium arsenide (GaAs)/aluminum-arsenic/GaAs single-barrier heterostructures of varying widths using a tight-binding model. Examination of the role of nonzero wave vector parallel to the interface on tunneling; Information on the current-voltage...

  • Nonrandom alloying in In0.52Al0.48As/InP grown by molecular beam epitaxy. Hong, Won-Pyo; Bhattacharya, Pallab K.; Singh, Jasprit // Applied Physics Letters;3/9/1987, Vol. 50 Issue 10, p618 

    Anomalous behavior in Hall data of molecular beam epitaxial In0.52Al0.48As/InP for T≥400 K suggests the presence of alloy clustering. The relaxation time for alloy clustering has been determined and analysis of measured data gives an estimate of composition fluctuation and cluster size....

  • Valley selective tunneling transistor based on valley discontinuities in AlGaAs heterostructures. Singh, Jasprit // Applied Physics Letters;12/18/1989, Vol. 55 Issue 25, p2652 

    The conduction-band discontinuities in AlxGa1-xAs/AlyGa1-yAs heterostructure for various valleys (Γ, L, X) are utilized to conceive of a valley selective tunneling transistor. At low temperature, the perpendicular tunneling current is very small because of the large Γ-Γ discontinuity...

  • Comment on "Fermi-edge singularity observed in a modulation-doped AlGaN/GaN heterostructure" [Appl. Phys. Lett. 73, 2471 (1998)]. Monemar, B.; Bergman, J. P.; Holtz, P. O. // Applied Physics Letters;1/31/2000, Vol. 76 Issue 5, p655 

    Comments on an article about the properties of a modulation doped aluminum-gallium-nitrogen (AlGaN) heterostructure published in the 1998 issue of the periodical 'Applied Physics Letters.'

  • Stable and unstable current-voltage measurements of a resonant tunneling heterostructure oscillator. Shewchuk, T. J.; Gering, J. M.; Chapin, P. C.; Coleman, P. D.; Kopp, W.; Peng, C. K.; Morkoç, H. // Applied Physics Letters;11/1/1985, Vol. 47 Issue 9, p986 

    Microwave oscillations in double barrier GaAs-AlxGa1-xAs resonant tunneling heterostructures have been investigated. In this letter an approach is presented to obtain stable, dc current-voltage (I-V) curves by using a damped microwave circuit to prevent device oscillations which distort the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics