Cross sectional studies of buried semiconductor interfaces by means of photoemission microscopy

Barbo, F.; Bertolo, M.; Bianco, A.; Cautero, G.; Fontana, S.; Johal, T. K.; La Rosa, S.; Purandare, R. C.; Svetchnikov, N.; Franciosi, A.; Orani, D.; Piccin, M.; Rubini, S.; Cimino, R.
April 2002
Applied Physics Letters;4/8/2002, Vol. 80 Issue 14, p2511
Academic Journal
An important application of photoemission spectromicroscopy would be to measure heterostructures and semiconductor devices in cross section to directly determine band offsets and band bending. We present here studies of p-n GaAs homojunctions and Al/GaAs Schottky junctions fabricated by molecular-beam epitaxy. Our results suggest that a minimum experimental uncertainty of about 0.15 eV will effect band offset determination. In general, useful quantitative information on the junction electrostatics can be obtained provided that the experimental data are analyzed to substract the diffuse photon background and take into account the intensity profile of the photon spot. © 2002 American Institute of Physics.


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