Local electrostatic potential and process-induced boron redistribution in patterned Si/SiGe/Si heterostructures

Orchowski, A.; Rau, W.-D.; Ru¨cker, H.; Heinemann, B.; Schwander, P.; Tillack, B.; Ourmazd, A.
April 2002
Applied Physics Letters;4/8/2002, Vol. 80 Issue 14, p2556
Academic Journal
We present microscopic maps of the electrostatic potential in Si/SiGe/Si patterned structures of the type used in heterostructure bipolar transistors. By obtaining such maps before and after anneals typically used in device processing, we directly reveal the “vertical” and “lateral” redistribution of boron during device fabrication. Such data can be compared with the results of process simulation to extract the fundamental parameters for dopant diffusion in complex device structures. © 2002 American Institute of Physics.


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