Enhanced tunneling across nanometer-scale metal–semiconductor interfaces

Smit, G. D. J.; Rogge, S.; Klapwijk, T. M.
April 2002
Applied Physics Letters;4/8/2002, Vol. 80 Issue 14, p2568
Academic Journal
We have measured electrical transport across epitaxial, nanometer-sized metal–semiconductor interfaces by contacting CoSi[sub 2] islands grown on Si(111) with the tip of a scanning tunneling microscope. The conductance per unit area was found to increase with decreasing diode area. Indeed, the zero-bias conductance was found to be ∼10[sup 4] times larger than expected from downscaling a conventional diode. These observations are explained by a model, which predicts a narrower barrier for small diodes and, therefore, a greatly increased contribution of tunneling to the electrical transport. © 2002 American Institute of Physics.


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