Quasiregular quantum-dot-like structure formation with postgrowth thermal annealing of InGaN/GaN quantum wells

Lin, Yen-Sheng; Ma, Kung-Jen; Hsu, Cheng; Chung, Yi-Yin; Liu, Chih-Wen; Feng, Shih-Wei; Cheng, Yung-Chen; Yang, C. C.; Mao, Ming-Hua; Chuang, Hui-Wen; Kuo, Cheng-Ta; Tsang, Jian-Shihn; Weirich, Thomas E.
April 2002
Applied Physics Letters;4/8/2002, Vol. 80 Issue 14, p2571
Academic Journal
Postgrowth thermal annealing of an InGaN/GaN quantum-well sample with a medium level of nominal indium content (19%) was conducted. From the analyses of high-resolution transmission electron microscopy and energy filter transmission electron microscopy, it was found that thermal annealing at 900 °C led to a quasiregular quantum-dot-like structure. However, such a structure was destroyed when the annealing temperature was raised to 950 °C. Temperature-dependent photoluminescence (PL) measurements showed quite consistent results. Blueshift of the PL peak position and narrowing of the PL spectral width after thermal annealing were observed. © 2002 American Institute of Physics.


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