TITLE

Few-electron filling effect in laterally coupled spherical InAs/GaAs quantum-dot system

AUTHOR(S)
Dai, Zhen-Hong; Zhang, Li-De; Sun, Jin-Zuo; Li, Zuo-Hong; Huang, Shi-Yong
PUB. DATE
April 2002
SOURCE
Applied Physics Letters;4/8/2002, Vol. 80 Issue 14, p2577
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Artificial molecules, i.e., systems of excess electrons confined in multiple semiconductor InAs/GaAs quantum dots, are studied with the unrestricted Hartree–Fock–Roothaan method. We focus our attention on calculating the chemical potential for two laterally coupled spherical quantum dots. The confinement potential in each quantum dot of the molecule is assumed in a form of three-dimensional spherical finite potential well of radius R and depth V[sub 0]. The chemical potential is found to depend strongly on the proportionality of the radii of the two quantum dots. This method can be extended to study large quantum-dot arrays. © 2002 American Institute of Physics.
ACCESSION #
6427056

 

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