Nucleation of copper on TiN and SiO[sub 2] from the reaction of hexafluoroacetylacetonate copper(I) trimethylvinylsilane

Ma, P. F.; Schroeder, T. W.; Engstrom, J. R.
April 2002
Applied Physics Letters;4/8/2002, Vol. 80 Issue 14, p2604
Academic Journal
The nucleation of copper on TiN and SiO[sub 2] surfaces has been investigated using a collimated molecular beam of hexafluroacetylacetonate copper(I) trimethylvinylsilane in ultrahigh vacuum. The Cu thin film precursor was delivered using a bubbler with H[sub 2] as the carrier gas and the substrate temperature was varied from 150 to 260 °C. Ex situ analysis of thin film morphology and microstructure has been conducted using scanning electron microscopy. On SiO[sub 2] surfaces the Cu nuclei density reaches a maximum near 5×10[sup 10] cm[sup -2], nearly independent of substrate temperature. In contrast, on TiN surfaces the maximum nuclei density is strongly dependent on temperature, varying nearly two orders of magnitude from 150 to 260 °C. On TiN the nucleation process is described well by established kinetic models where a maximum in nuclei density (N[sub max]) is predicted with respect to the time, and where this quantity exhibits an Arrhenius dependence on substrate temperature. © 2002 American Institute of Physics.


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