Picosecond intersubband dynamics in p-Si/SiGe quantum-well emitter structures

Murzyn, P.; Pidgeon, C.R.; Wells, J.-P.R.; Bradley, I.V.; Ikonic, Z.; Kelsall, R.W.; Harrison, P.; Lynch, S.A.; Paul, D.J.; Arnone, D.D.; Robbins, D.J.; Norris, D.; Cullis, A.G.
February 2002
Applied Physics Letters;2/25/2002, Vol. 80 Issue 8, p1456
Academic Journal
Studies the picosecond intersubband dynamics in p-type Si/SiGe quantum-well emitter structures. Rate equation model of the transient far-infrared intersubband absorption; Observation of intersubband disorder scattering; Dependence of subband lifetime on both temperature and excitation model.


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