TITLE

Electronic passivation of Si(111) by Ga-Se half-sheet termination

AUTHOR(S)
Fritsche, R.; Wisotzki, E.; Islam, A.B.M.O.; Thissen, A.; Klein, A.; Jaergermann, W.
PUB. DATE
February 2002
SOURCE
Applied Physics Letters;2/25/2002, Vol. 80 Issue 8, p1388
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the electronic passivation of silicon(111) by gallium-selenium half-sheet termination. Preparation of Si(111):GaSe van der Waals surface; Application of soft x-ray photoelectron spectroscopy and low-energy electron diffraction; Comparison to other silicon surface termination procedures.
ACCESSION #
6411385

 

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