TITLE

Real-time x-ray scattering study on the thermal evolution of interface roughness in CoSi[sub2] formation

AUTHOR(S)
Tae Soo Kang; Jung Ho Le
PUB. DATE
February 2002
SOURCE
Applied Physics Letters;2/25/2002, Vol. 80 Issue 8, p1361
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the thermal evolution of interface roughness during cobalt silicide formation in the Co/Ti/Si(001) and Co/Si(001) systems. Use of real-time synchroton x-ray scattering measurement; Enhancement of the CoSi[sub 2]/Si(001) interface roughness; Suppression of the reaction between the cobalt overlayer and silicon substrate.
ACCESSION #
6410960

 

Related Articles

  • Interface roughening in surfactant deposition. Hasegawa, Shigehiko; Ryland, Robert G. // Applied Physics Letters;11/14/1994, Vol. 65 Issue 20, p2609 

    Describes the roughening of surface silicon (Si) atom density during antimony-induced Si(111) surface reconstructions. Evidence of silicon mass transport originating from surface Si atom density imbalance; Replacement and absorption of Si atoms by antimony; Orientation of formed pits with the...

  • Effect of hydrogen on surface roughening during Si homoepitaxial growth. Adams, D.P.; Yalisove, S.M. // Applied Physics Letters;12/27/1993, Vol. 63 Issue 26, p3571 

    Examines the influence of hydrogen on the evolution of surface roughening during Si(100) homoepitaxy. Presence of surface roughness within the epitaxial film; Dependence of the rate at which the surface roughens on the partial pressure of deuterium; Observation on the crystalline to amorphous...

  • Interface roughness during thermal and ion-induced regrowth of amorphous layers on Si(001). Lohmeier, M.; de Vries, S. // Applied Physics Letters;4/4/1994, Vol. 64 Issue 14, p1803 

    Examines the roughness of silicon amorphous/crystalline interface by solid phase epitaxy (SPE) and ion-beam-induced epitaxial crystallization (IBIEC). Measurement of interface roughness by scattered x-ray intensity; Comparison of the root-mean-square-roughness between SPE and IBIEC; Description...

  • Etching roughness for (100) silicon surfaces in aqueous KOH. Palik, E. D.; Glembocki, O. J.; Heard, I.; Burno, P. S.; Tenerz, L. // Journal of Applied Physics;9/15/1991, Vol. 70 Issue 6, p3291 

    Presents a study that examined the quality of vertical roughness produced by the etching of silicon in aqueous KOH by varying several experimental parameters. Principle origin of vertical roughness; Preparation of sample used in the experiment; Dependence of roughness on the time of etching.

  • Surface roughness effects in laser crystallized polycrystalline silicon. McCulloch, D.J.; Brotherton, S.D. // Applied Physics Letters;4/17/1995, Vol. 66 Issue 16, p2060 

    Analyzes the effects of surface roughness in laser crystallized polycrystalline silicon. Variation of surface roughness; Release of hydrogen from hydrogen-rich plasma enhanced chemical vapor deposited amorphous silicon; Dependence of surface roughness on hydrogen content of the material.

  • (111)-Oriented Pb(ZrTi)O thin film on Pt(111)/Si substrate using CoFeO nano-seed layer by pulsed laser deposition. Khodaei, M.; Seyyed Ebrahimi, S.; Park, Yong; Song, Seungwoo; Jang, Hyun; Son, Junwoo; Baik, Sunggi // Journal of Materials Science: Materials in Electronics;Oct2013, Vol. 24 Issue 10, p3736 

    Perovskite Pb(ZrTi)O (PZT) thin film with perfect (111)-orientation was achieved on CoFeO seeded-Pt(111)/Ti/SiO/Si substrate by pulsed laser deposition technique using target with limited excess Pb. Pyrochlore phase formation was suppressed on Pt by CoFeO nano-seed layer (~7 nm), and perovskite...

  • Grain boundary diffusion effects on the sputter depth profiles of Co–Ag bilayers. Lee, Y. S.; Choi, I. S.; Lim, K. Y.; Jeong, K.; Whang, C. N.; Choe, H. S.; Lee, Y. P. // Journal of Applied Physics;4/1/1996, Vol. 79 Issue 7, p3534 

    Presents a study which investigated the effects of surface roughness and grain boundary diffusion at elevated temperatures on the Auger-electron-spectroscopy sputter depth profiles of cobalt-silver bilayers and the grain boundary process of silver atoms in cobalt. Introduction to sputter depth...

  • Formation of Surface Layer of Cobalt Chrome Molybdenum Powder Products with Differentiation of Laser Sintering Modes. Saprykina, N. A.; Saprykin, A. A.; Matrunchik, M. S. // Applied Mechanics & Materials;2014, Issue 682-686, p294 

    The paper presents results of research on a method of determining a geometric condition of a sintered surface using an instrumental digital microscope. The results of experimental studies of effects of laser irradiation technological modes on roughness of the cobalt chrome molybdenum powder...

  • Effect of metal–oxide–semiconductor processing on the surface roughness of strained Si/SiGe material. Olsen, S. H.; O’Neill, A. G.; Bull, S. J.; Woods, N. J.; Zhang, J. // Journal of Applied Physics;8/1/2002, Vol. 92 Issue 3, p1298 

    The impact of metal-oxide-semiconductor processing on strained Si/SiGe device structures has been examined. Material was grown by gas-source molecular beam epitaxy and ultra low pressure chemical vapor deposition, with different as-grown surface roughness. The effects of RCA cleaning, gate...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics