Correlations between spatially resolved Raman shifts and dislocation density in GaN films

Nootz, G.; Schulte, A.; Osinsky, A.; Jasinski, J.; Benamara, M.; Liliental-Weber, Z.
February 2002
Applied Physics Letters;2/25/2002, Vol. 80 Issue 8, p1355
Academic Journal
Measures the spatially resolved Raman spectra on thick GaN samples with known dislocation density grown by hybrid vapor phase epitaxy. Frequencies of the high and transverse optical phonons; Correlation of shifts with dislocation density; Distance from the sapphire substrate/GaN interface.


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