Reduction of reflection losses in ZnGeP[sub 2] using motheye antireflection surface relief structures

Aydin, C.; Zaslavsky, A.; Sonek, G. J.; Goldstein, J.
April 2002
Applied Physics Letters;4/1/2002, Vol. 80 Issue 13, p2242
Academic Journal
We report the reduction of surface reflection losses in zinc germanium phosphide (ZnGeP[sub 2], or ZGP) crystals by fabricating an antireflection (AR) structure in the substrate itself using subwavelength motheye surface patterns. The motheye AR patterning works by creating a region of gradually varying effective refractive index between air and the ternary nonlinear crystal. Motheye structures were created using interference lithography and reactive-ion etching in a SiCl[sub 4] plasma. The ZGP crystal with motheye patterning on the output surface reached a transmittance of ∼67% at a cutoff wavelength of 3.8 µm (close to the theoretical maximum of 73%), with negligible surface contamination from the motheye etching process. The motheye patterning technique could be applied to other nonlinear crystals where surface reflection losses are a concern.


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