Structural study of refractory-metal-free C40 TiSi[sub 2] and its transformation to C54 TiSi[sub 2]

Yu, T.; Tan, S. C.; Shen, Z. X.; Chen, L. W.; Lin, J. Y.; See, A. K.
April 2002
Applied Physics Letters;4/1/2002, Vol. 80 Issue 13, p2266
Academic Journal
The structure of laser-induced refractory-metal-free C40 TiSi[sub 2] has been studied by glancing-angle x-ray diffraction (GAXRD) in detail. The result shows that laser-induced C40 TiSi[sub 2] has a hexagonal structure with the P6[sub 2]22 space group and lattice parameters a = 0.467 nm and c = 0.662 nm. The ordering effect and the stress effect on the TiSi[sub 2] film are also discussed based on the GAXRD and micro-Raman results. The C40 phase completely transforms to the technologically important C54 phase at a relatively low temperature of 700 °C.


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