TITLE

Effect of low-temperature preannealing on laser-annealed p[sup +]/n ultrashallow junctions

AUTHOR(S)
Baek, Sungkweon; Jang, Taesung; Hwang, Hyunsang
PUB. DATE
April 2002
SOURCE
Applied Physics Letters;4/1/2002, Vol. 80 Issue 13, p2272
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The effect of low-temperature preannealing on ultrashallow p[sup +]/n junctions was examined. An ultrashallow junction was formed by means of B[sub 2]H[sub 6] plasma doping at an energy of 500 V. The junction was activated by low-temperature (300-500 °C) annealing, followed by laser annealing. Compared with control samples which were not preannealed, low-temperature preannealing significantly improves junction characteristics, resulting in a reduction in junction depth and a lower leakage current density. A cross-sectional transmission-electron-microscopy analysis confirmed the lower defect density, which explains the lower leakage current. By optimizing the process conditions, excellent electrical characteristics of the p[sup +]/n junction, i.e., a junction depth of 28 nm and a sheet resistance of 250 Ω/sq, can be obtained.
ACCESSION #
6391232

 

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