TITLE

Determining the relationship between local lattice strain and slip systems of dislocations around shallow trench isolation by convergent-beam electron diffraction

AUTHOR(S)
Toda, Akio; Ikarashi, Nobuyuki; Ono, Haruhiko; Okonogi, Kensuke
PUB. DATE
April 2002
SOURCE
Applied Physics Letters;4/1/2002, Vol. 80 Issue 13, p2278
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We clarified the generation of process-induced dislocations around a shallow trench isolation (STI) by using convergent-beam electron diffraction. Comparing the resolved shear strain (RSS) of 12 slip systems, we found that at the trench bottom comer the RSS on slip systems (1 -1 1)[0 1 1] and (1 -1 1)[1 0 -1] was largest in all slip systems. In fact, the dislocations of slip systems (1 -1 1)[0 1 1] and (1 -1 1)[1 0 -1] were observed around the trench bottom corner more often than those of any other slip systems. We also found that the large RSS at the trench bottom comer may be due to the comer shape or the intrinsic stress induced during oxidation. Therefore, to control dislocation around STI, the oxidation-induced stress at the trench bottom comer must be reduced, and the shape of the bottom comer must be controlled.
ACCESSION #
6391230

 

Related Articles

  • Dislocation Boundary Structure from Low to Medium Strain of Cold Rolling AA3104 Aluminum Alloy. Zongyong Yao; Guangjie Huang; Godfrey, Andrew; Wei Liu; Qing Liu // Metallurgical & Materials Transactions. Part A;Jun2009, Vol. 40 Issue 6, p1487 

    The evolution of the dislocation boundary structure during the cold rolling of the AA3104 aluminum alloy has been investigated using electron channeling contrast (ECC) imaging and electron backscattered diffraction (EBSD) techniques. The results show that there is a strong correlation between...

  • Study of fracture evolution in copper sheets by in situ tensile test and EBSD analysis. Ifergane, S.; Barkay, Z.; Beeri, O.; Eliaz, N. // Journal of Materials Science;Dec2010, Vol. 45 Issue 23, p6345 

    Microstructural changes during plastic deformation and fracture evolution play an important role in the understanding of fracture mechanisms. However, most publications have focused on the initial stages of deformation where the latter is uniform. The current study was focused on the last stages...

  • Dynamic emission of screw dislocations from a propagating crack tip. Tsai, Y.Z.; Lee, Sanboh // Journal of Applied Physics;3/1/1997, Vol. 81 Issue 5, p2089 

    Studies the dynamic emission of screw dislocations from a propagating crack tip of metals. Derivation of the stress intensity factor for the dislocation emission; Relations of crack mobility with dislocation emissions.

  • Deformation Mechanism of Zr702 Processed by Equal Channel Angular Pressing. Cao, W. Q.; Yu, S. H.; Chun, Y. B.; Shin, D. H.; Hwang, S. K. // Metallurgical & Materials Transactions. Part A;Nov2007, Vol. 38 Issue 11, p2805 

    Commercial purity zirconium (Zr702) was deformed by equal channel angular (ECA) pressing up to eight passes, and the resulting microstructure and texture were studied by electron backscattered diffraction, transmission electron microscopy (TEM), and X-ray diffraction. The most prominent feature...

  • Dislocation Mechanism of Nanotube Formation. Pokropivny, A. V.; Pokropivny, V. V. // Technical Physics Letters;Jun2003, Vol. 29 Issue 6, p494 

    We propose a dislocation mechanism explaining the formation of multi- and single-sheet nanotubes and a disclination mechanism accounting for the formation of nanocones. According to the proposed mechanism, rolling up a graphite sheet gives rise to elastic stresses which are released through the...

  • Cathodoluminescence study of the influence of misfit dislocations on hole accumulation in an n-AlGaAs/p-GaAs/n-InGaAs heterojunction phototransistor. Lin, H. T.; Rich, D. H.; Sjo¨lund, O.; Ghisoni, M.; Larsson, A. // Applied Physics Letters;9/9/1996, Vol. 69 Issue 11, p1602 

    We have studied the influence of misfit dislocations on hole accumulation in the base layer of an n-AlGaAs/p-GaAs/n-InGaAs heterojunction phototransistor (HPT). Spatially and temporally resolved cathodoluminescence (CL) measurements reveal that variations in the hole accumulation is caused...

  • The interaction of an edge dislocation with an inclusion of arbitrary shape analyzed by the Eshelby inclusion method. Shi, J.-Y.; Li, Z.-H. // Acta Mechanica;2003, Vol. 161 Issue 1/2, p31 

    Summary. The interaction of an edge dislocation with an inclusion of arbitrary shape is analyzed based on the Eshelby equivalent inclusion method. A general solution to determine the force on the dislocation is obtained, from which a set of simple approximate formulae is also suggested.

  • Generation and Evolution of Partial Misfit Dislocations and Stacking Faults in Thin-Film Heterostructures. Gutkin, M. Yu.; Mikaelyan, K. N.; Ovid�ko, I. A. // Physics of the Solid State;Jan2001, Vol. 43 Issue 1, p42 

    An analysis is made of the specific features in the generation and evolution of partial misfit dislocations at the vertices of V-shaped configurations of stacking fault bands, which terminate in the bulk of the growing film at 90� partial Shockley dislocations. The critical thicknesses...

  • Relaxed Ge[sub 0.9]Si[sub 0.1] alloy layers with low threading dislocation densities grown on low-temperature Si buffers. Peng, C. S.; Zhao, Z. Y.; Chen, H.; Li, J. H.; Li, Y. K.; Guo, L. W.; Dai, D. Y.; Huang, Q.; Zhou, J. M.; Zhang, Y. H.; Sheng, T. T.; Tung, C. H. // Applied Physics Letters;6/15/1998, Vol. 72 Issue 24 

    Relaxed Ge[sub x]Si[sub 1-x] epilayers with high Ge fractions but low threading dislocation densities have been successfully grown on Si (001) substrate by employing a stepped-up strategy and a set of low-temperature Ge[sub y]Si[sub 1-y] buffers. We show that even if the Ge fraction rises up to...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics