TITLE

Radiative recombination during ambipolar carrier transport by surface acoustic waves in GaAs quantum wells

AUTHOR(S)
Zhang, S. K.; Santos, P. V.; Hey, R.
PUB. DATE
April 2002
SOURCE
Applied Physics Letters;4/1/2002, Vol. 80 Issue 13, p2320
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the defect-assisted radiative recombination of photogenerated electrons and holes in GaAs quantum wells (QWs) during the transport by surface acoustic waves (SAWs). The studies were performed by detecting the spatial distribution of the photoluminescence (PL) with a resolution of a few micrometers. Under a SAW, a high PL intensity is observed on spatially localized spots along the SAW propagation path. This high PL intensity is attributed to recombination of the carriers, which are transported by the SAW, induced by charged defects located on or close to the QW plane.
ACCESSION #
6391214

 

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