Fabrication of a low-threading-dislocation-density Al[sub x]Ga[sub 1-x]N buffer on SiC using highly Si-doped Al[sub x]Ga[sub 1-x]N superlattices

Hirayama, Hideki; Ainoya, Makoto; Kinoshita, Atsuhiro; Hirata, Akira; Aoyagi, Yoshinobu
March 2002
Applied Physics Letters;3/25/2002, Vol. 80 Issue 12, p2057
Academic Journal
An in situ technique to reduce the threading dislocation density (TDD) of an Al[sub x]Ga[sub 1-x]N buffer within submicron-thick growth is demonstrated using metalorganic vapor-phase epitaxy. We achieved a marked reduction in the TDD of the AlGaN buffer on a SiC substrate by inserting superlattices (SLs) consisting of highly Si-doped AlGaN and undoped AlGaN layers. The TDD of AlGaN decreased from 2 x 10[sup 10] to 7 x 10[sup 7] cm[sup -2] by inserting SLs with total growth thickness of 0.8 µm. The Si incorporation in the highly Si-doped AlGaN layers of the SLs was estimated to be approximately 1.2 x 10[sup 20] cm[sup -3] (0.24%). This is strictly an in situ technique that does not require complicated fabrication processes, and the surface is kept flat throughout the entire growth. This method is especially useful on SiC wafers to prevent cracks in a thin growth layer.


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