In situ diffuse reflectance spectroscopy investigation of low-temperature-grown GaAs

Zhao, Ri-an; Cich, Michael J.; Specht, Petra; Weber, Eicke R.
March 2002
Applied Physics Letters;3/25/2002, Vol. 80 Issue 12, p2060
Academic Journal
We have utilized in situ diffuse reflectance spectroscopy (DRS) to monitor both the substrate temperature transient and the epilayer absorption during low-temperature (LT) GaAs molecular-beam epitaxy. We have found a significant increase of the sub-band-gap absorption from LT GaAs. The magnitude of absorption at 1.2 eV correlates well with the concentration of arsenic antisite defects. The incorporation rate of arsenic antisites appears uniform despite a substrate temperature transient due to the effusion cell radiation heating. The influence of absorption spectra change on the accuracy of DRS temperature measurement is also discussed. This study shows that DRS can be used for both growth temperature measurement and real-time nonstoichiometry monitoring.


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