TITLE

Bandtail characteristics in InN thin films

AUTHOR(S)
Shen, W. Z.; Jiang, L. F.; Yang, H. F.; Meng, F. Y.; Ogawa, H.; Guo, Q. X.
PUB. DATE
March 2002
SOURCE
Applied Physics Letters;3/25/2002, Vol. 80 Issue 12, p2063
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The Urbach bandtail characteristics in InN thin films grown by radio-frequency magnetron sputtering on sapphire (0001) substrates have been investigated both theoretically and experimentally. The bandtail parameter in InN thin films has been obtained by temperature-dependent transmission spectra, with the aid of a detailed calculation of the transmission profile. A bandtail model based on the calculation of density of occupied states and the carrier-phonon interaction has been employed to analyze the temperature-dependent bandtail characteristics. The bandtail parameter is in the range of 90-120 meV in the InN thin film. It is found that the carrier-phonon interaction in InN is weak and the structural disorder contribution (∼ 90 meV) dominates over the interactive terms. The high structural disorder in InN thin films may relate to the high nonradiative recombination centers.
ACCESSION #
6358348

 

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