Thermal annealing effect on nitrogen vacancy in proton-irradiated Al[sub x]Ga[sub 1-x]N

Zhou, Qiaoying; Manasreh, M. O.
March 2002
Applied Physics Letters;3/25/2002, Vol. 80 Issue 12, p2072
Academic Journal
The optical absorption band associated with the nitrogen vacancy in proton-irradiated Al[sub x]Ga[sub 1-x]N, for x=0.61 and 1, is investigated under isothermal furnace annealing in the temperature range of 150-350 °C. The results show that the enthalpy associated with the thermal migration process is 0.410 ± 0.023 and 0.445 ± 0.037 eV for Al[sub 0.61]Ga[sub 0.39]N and AlN, respectively. The variation of the full width at half maximum (FWHM) of the nitrogen vacancy absorption band in AlN as a function of temperature indicates that the electronic transition associated with the defect is coupled to a phonon with an energy of 47.8 meV. This phonon energy is in good agreement with the E[sub 2] phonon mode reported for AlN. A Frank-Condon shift of 1.142 eV is also estimated from the FWHM measured as a function of temperature, which is indicative of a large lattice distortion in the vicinity of the defect.


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