High-mobility InSb epitaxial films grown on a GaAs (001) substrate using liquid-phase epitaxy

Dixit, V. K.; Bansal, Bhavtosh; Venkataraman, V.; Bhat, H. L.; Subbanna, G. N.; Chandrasekharan, K. S.; Arora, B. M.
March 2002
Applied Physics Letters;3/25/2002, Vol. 80 Issue 12, p2102
Academic Journal
The growth of epitaxial InSb layers on highly lattice-mismatched semi-insulating GaAs substrates has been achieved via traditional liquid-phase epitaxy. Scanning and transmission electron microscopy show sharp interfaces even at 35 nm resolution. High-resolution x-ray diffraction studies reveal reflections even up to 2θ=153° with distinct layer and substrate peaks, indicating structural coherence. The films grown were n type and the highest electron mobility obtained was 3.96 x 10[sup 4] cm²/Vs at room temperature. The band gap varies from 0.17 to 0.23 eV in the temperature range of 300-10 K and is consistent with the expected variation. These results indicate that the films grown are comparable to those grown by other sophisticated techniques in terms of structural, optical and electrical properties.


Related Articles

  • Effect of substrate temperature on the growth rate and surface morphology of heteroepitaxial indium antimonide layers grown on (100) GaAs by metalorganic magnetron sputtering. Rao, T. Sudersena; Halpin, C.; Webb, J. B.; Noad, J. P.; McCaffrey, J. // Journal of Applied Physics;1/15/1989, Vol. 65 Issue 2, p585 

    Discusses the effect of substrate temperature on the growth rate and surface morphology of heteroepitaxial indium antimonide (InSb) layers grown on gallium arsenide (GaAs) by metalorganic magnetron sputtering. Dependence of the surface morphology on growth temperature; Nature of the...

  • Elastic accommodation of heteroepitaxial InSb films on GaAs. Rajan, K.; Gong, R.; Webb, J. // Applied Physics Letters;10/1/1990, Vol. 57 Issue 14, p1446 

    Heteroepitaxial films of InSb on GaAs (100) grown by metalorganic magnetron sputtering have been studied by transmission electron microscopy. The elastic strain in the InSb films has been measured using Moiré fringe analysis. Dilational lattice strain was found to decrease with increasing...

  • Two-dimensional growth of InSb thin films on GaAs(111)A substrates. Kanisawa, K.; Yamaguchi, H.; Hirayama, Y. // Applied Physics Letters;1/31/2000, Vol. 76 Issue 5, p589 

    Heteroepitaxy of high-quality InSb films was performed directly on GaAs surfaces by using molecular beam epitaxy. Despite the 14.6% lattice mismatch, two-dimensionally grown InSb on GaAs(111)A substrates were obtained from the initial stage, but not on (001) substrates. A conductive layer was...

  • Photoluminescence of InSb quantum dots in GaAs and GaSb matrices. Tsatsul�nikov, A. F.; Ledentsov, N. N.; Maksimov, M. V.; Mel�tser, B. Ya.; Neklyudov, P. V.; Shaposhnikov, S. V.; Volovik, B. V.; Krestnikov, I. L.; Sakharov, A. V.; Bert,, N. A.; Kop�ev, P. S.; Alferov, Zh. I.; Bimberg, D. // Semiconductors;Jan1997, Vol. 31 Issue 1, p55 

    The photoluminescent properties of quantum dots formed in the deposition of an InSb thin film (1�3 monolayers) on GaAs(100) and GaSb(100) surface are investigated. The results indicate the importance of As�Sb substitution reactions in the formation of quantum dots on a GaAs surface....

  • Use of angle-dependent photoemission for atom profiling: Au on compound semiconductors. Shapira, Yoram; Xu, F.; Hill, D. M.; Weaver, J. H. // Applied Physics Letters;7/13/1987, Vol. 51 Issue 2, p118 

    We present studies of Au film formation on the III-V compound semiconductors GaAs and InSb based on polar-angle-dependent x-ray photoelectron spectroscopy. The results highlight the power of this technique as a nondestructive tool for atom profiling. The Au overlayer is highly heterogeneous due...

  • Increase of effective viscosity of molten GaAs and InSb under an axial magnetic field. Ozawa, Shoichi; Eguchi, Minoru; Fujii, Takashi; Fukuda, Tsuguo // Applied Physics Letters;7/20/1987, Vol. 51 Issue 3, p197 

    We have measured the effective dynamic viscosity of molten GaAs and InSb as a function of axial magnetic field by the oscillating vessel method. Effective viscosity of these semiconductor melts is observed to increase with the axial magnetic field intensity in the range of 0 to 5 kG.

  • MBE growth of indium antimonide reduces cost of infrared arrays.  // Laser Focus World;Jul96, Vol. 32 Issue 7, p13 

    Reports that scientists at the Center for Quantum Devices at Northwestern University have demonstrated 3- to 5-micrometer focal-plane 256 by 256-pixel array imaging using indium antimonide (InSb) grown on a gallium arsenide (GaAs) substrate. Advantage of growing the material on GaAs wafers by...

  • A first principles study of the lattice stability of diamond-structure semiconductors under intense laser irradiation. Feng, ShiQuan; Zhao, JianLing; Cheng, XinLu // Journal of Applied Physics;Jan2013, Vol. 113 Issue 2, p023301 

    Using density-functional linear-response theory, we calculated the phonon dispersion curves for the diamond structural elemental semiconductors of Ge, C and zinc-blende structure semiconductors of GaAs, InSb at different electronic temperatures. We found that the transverse-acoustic phonon...

  • n-InSb/GaAs Thin Films for Cryogenic Hall Sensors. Oszwaldowski, M.; Berus, T. // AIP Conference Proceedings;2006, Vol. 850 Issue 1, p1633 

    Basic parameters of Hall sensors obtained from InSb thin films epitaxially grown on insulating GaAs are presented. These sensors show extremely low temperature coefficients of resistance and magnetic sensitivity in a broad range of cryogenic temperatures. Furthermore, they show no Shubnikov-de...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics