TITLE

Characteristics of high-quality p-type Al[sub x]Ga[sub 1-x]N/GaN superlattices

AUTHOR(S)
Yasan, A.; McClintock, R.; Darvish, S. R.; Lin, Z.; Mi, K.; Kung, P.; Razeghi, M.
PUB. DATE
March 2002
SOURCE
Applied Physics Letters;3/25/2002, Vol. 80 Issue 12, p2108
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Very-high-quality p-type Al[sub x]Ga[sub 1-x]N/GaN superlattices have been grown by low-pressure metalorganic vapor-phase epitaxy through optimization of Mg flow and the period of the superlattice. For the superlattice with x=26%, the hole concentration reaches a high value of 4.2 x 10[sup 18] cm[sup -3] with a resistivity as low as 0.19 Ω cm by Hall measurement. Admittance spectroscopy was performed in order to investigate the electrical properties of the superlattices. These measurements confirm that superlattices with a larger period and higher Al composition have higher hole concentration and lower resistivity, as predicted by theory.
ACCESSION #
6358333

 

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