TITLE

Electron traps in Ga(As,N) layers grown by molecular-beam epitaxy

AUTHOR(S)
Krispin, P.; Spruytte, S. G.; Harris, J. S.; Ploog, K. H.
PUB. DATE
March 2002
SOURCE
Applied Physics Letters;3/25/2002, Vol. 80 Issue 12, p2120
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Deep levels in the upper half of the band gap of strained Ga(As,N) with a GaN mole fraction of 3% are examined by deep-level transient Fourier spectroscopy on GaAs/Ga(As,N)/GaAs heterojunctions grown by molecular-beam epitaxy. In as-grown structures, we find a dominant electron trap at 0.25 eV below the conduction bandedge with a concentration above 10[sup 17] cm[sup -3]. Its capture cross section of about 10[sup -17] cm² for electrons is too small for an efficient nonradiative recombination center in Ga(As,N). According to theoretical predictions, this level is most likely connected with a nitrogen-split interstitial defect (N-N)[sub As]. The giant concentration of this trap can be strongly reduced by rapid thermal annealing.
ACCESSION #
6358329

 

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